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Title: The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures

Abstract

The effect of the arsine content (from 0 to 8 μmol), supplied to a reactor together with hydrogen, on the formation of delta-doped gallium-arsenide structures by the pulsed laser sputtering of a Mn target is investigated. It is found that an arsine molar fraction of ~2.5 μmol in the reactor atmosphere during the formation of a Mn delta-doped GaAs layer allows one to obtain single-crystal epitaxial structures with the lowest layer resistance and a ferromagnetic-paramagnetic phase transition temperature of about 40 K. Increasing the arsine content to 8 μmol or the absence of arsine in a hydrogen flow leads to a significant increase in the layer resistance in the temperature range below 150 K and a decrease in the Curie temperature. In the first case, this may be due to partial compensation of the hole conductivity by donor-type defects formed as a result of an excess of arsenic on the growing surface (arsenic atoms in Ga positions or in interstitial positions). In the second case, when no arsine is supplied to the reactor, the growth surface is likely to be enriched with gallium atoms, which makes the incorporation of Mn into the Ga sublattice difficult.

Authors:
; ; ; ; ;  [1]
  1. Research Institute for Physics and Technology of Lobachevsky State University (Russian Federation)
Publication Date:
OSTI Identifier:
22749731
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; CURIE POINT; DOPED MATERIALS; GALLIUM ARSENIDES; MAGNETIC PROPERTIES; NANOSTRUCTURES; PHASE TRANSFORMATIONS; POTASSIUM 40; TEMPERATURE RANGE

Citation Formats

Kalentyeva, I. L., E-mail: istery@rambler.ru, Vikhrova, O. V., Danilov, Yu. A., Zvonkov, B. N., Kudrin, A. V., and Antonov, I. N. The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures. United States: N. p., 2018. Web. doi:10.1134/S1063782618110106.
Kalentyeva, I. L., E-mail: istery@rambler.ru, Vikhrova, O. V., Danilov, Yu. A., Zvonkov, B. N., Kudrin, A. V., & Antonov, I. N. The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures. United States. doi:10.1134/S1063782618110106.
Kalentyeva, I. L., E-mail: istery@rambler.ru, Vikhrova, O. V., Danilov, Yu. A., Zvonkov, B. N., Kudrin, A. V., and Antonov, I. N. Thu . "The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures". United States. doi:10.1134/S1063782618110106.
@article{osti_22749731,
title = {The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures},
author = {Kalentyeva, I. L., E-mail: istery@rambler.ru and Vikhrova, O. V. and Danilov, Yu. A. and Zvonkov, B. N. and Kudrin, A. V. and Antonov, I. N.},
abstractNote = {The effect of the arsine content (from 0 to 8 μmol), supplied to a reactor together with hydrogen, on the formation of delta-doped gallium-arsenide structures by the pulsed laser sputtering of a Mn target is investigated. It is found that an arsine molar fraction of ~2.5 μmol in the reactor atmosphere during the formation of a Mn delta-doped GaAs layer allows one to obtain single-crystal epitaxial structures with the lowest layer resistance and a ferromagnetic-paramagnetic phase transition temperature of about 40 K. Increasing the arsine content to 8 μmol or the absence of arsine in a hydrogen flow leads to a significant increase in the layer resistance in the temperature range below 150 K and a decrease in the Curie temperature. In the first case, this may be due to partial compensation of the hole conductivity by donor-type defects formed as a result of an excess of arsenic on the growing surface (arsenic atoms in Ga positions or in interstitial positions). In the second case, when no arsine is supplied to the reactor, the growth surface is likely to be enriched with gallium atoms, which makes the incorporation of Mn into the Ga sublattice difficult.},
doi = {10.1134/S1063782618110106},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 52,
place = {United States},
year = {2018},
month = {11}
}