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Title: Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon

Abstract

Data on the growth and physical properties of nanostructures of the type “InAsP insert embedded in InP nanowire (NW)” grown on Si (111) surfaces by Au-assisted molecular-beam epitaxy are presented. It is found that nearly 100%-coherent NWs can be grown with a widely varying surface density. A relationship between the optical and structural properties of the NWs is revealed. It is shown that the NWs under study are formed of a purely wurtzite phase. The suggested technology opens up new opportunities for the integration of direct-gap III–V materials and silicon.

Authors:
 [1];  [2]; ; ; ; ;  [1];  [3];  [1]
  1. St. Petersburg Academic University, Russian Academy of Sciences (Russian Federation)
  2. ITMO University (Russian Federation)
  3. Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22749728
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARSENIC COMPOUNDS; CRYSTAL GROWTH; INDIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; NANOWIRES; SILICON

Citation Formats

Cirlin, G. E., E-mail: cirlin@beam.ioffe.ru, Reznik, R. R., Samsonenko, Yu. B., Khrebtov, A. I., Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Kirilenko, D. A., and Kryzhanovskaya, N. V. Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon. United States: N. p., 2018. Web. doi:10.1134/S1063782618110258.
Cirlin, G. E., E-mail: cirlin@beam.ioffe.ru, Reznik, R. R., Samsonenko, Yu. B., Khrebtov, A. I., Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Kirilenko, D. A., & Kryzhanovskaya, N. V. Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon. United States. doi:10.1134/S1063782618110258.
Cirlin, G. E., E-mail: cirlin@beam.ioffe.ru, Reznik, R. R., Samsonenko, Yu. B., Khrebtov, A. I., Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Kirilenko, D. A., and Kryzhanovskaya, N. V. Thu . "Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon". United States. doi:10.1134/S1063782618110258.
@article{osti_22749728,
title = {Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon},
author = {Cirlin, G. E., E-mail: cirlin@beam.ioffe.ru and Reznik, R. R. and Samsonenko, Yu. B. and Khrebtov, A. I. and Kotlyar, K. P. and Ilkiv, I. V. and Soshnikov, I. P. and Kirilenko, D. A. and Kryzhanovskaya, N. V.},
abstractNote = {Data on the growth and physical properties of nanostructures of the type “InAsP insert embedded in InP nanowire (NW)” grown on Si (111) surfaces by Au-assisted molecular-beam epitaxy are presented. It is found that nearly 100%-coherent NWs can be grown with a widely varying surface density. A relationship between the optical and structural properties of the NWs is revealed. It is shown that the NWs under study are formed of a purely wurtzite phase. The suggested technology opens up new opportunities for the integration of direct-gap III–V materials and silicon.},
doi = {10.1134/S1063782618110258},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 52,
place = {United States},
year = {2018},
month = {11}
}