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Title: Modification of the Ferromagnetic Properties of Si{sub 1–x}Mn{sub x} Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure

Journal Article · · Semiconductors
; ; ; ; ;  [1];  [2]; ; ;  [3];  [4]
  1. Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center“Crystallography and Photonics”, Russian Academy of Sciences (Russian Federation)
  2. Kapitza Institute for Physical Problems, Russian Academy of Sciences (Russian Federation)
  3. National Research Center “Kurchatov Institute” (Russian Federation)
  4. Moscow State University (Russian Federation)

A series of thin films of Si{sub 1–x}Mn{sub x} alloys with a thickness from 50 to 100 nm grown by pulsed laser deposition on an Al{sub 2}O{sub 3} substrate in vacuum and in an argon atmosphere is investigated. The significant effect of the buffer-gas pressure in the sputtering chamber on the structural and magnetic homogeneity of the obtained films is shown. The conditions for the formation of a ferromagnetic phase with a high Curie temperature (>300 K) in the samples are studied. With the use of the Langmuir probe method, the threshold of ablation of a MnSi target by second harmonic radiation (λ = 532 nm) of a Nd:YAG Q-switch laser is determined. The time-of-flight curves for the plume ions are obtained with a change in the energy density at the target and argon pressure in the sputtering chamber. A nonmonotonic dependence of the probe time-of-flight signal amplitude on the argon pressure is established for high-energy particles of the plume.

OSTI ID:
22749726
Journal Information:
Semiconductors, Vol. 52, Issue 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English

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