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Title: MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer

Abstract

The possibility in principle of the MBE (molecular-beam epitaxy) growth of GaP and InP nanowires on a SiC substrate with a graphene layer is demonstrated for the first time. InP nanowires on such a substrate have no stacking faults and possess an ideal crystallographic quality. At the same time, GaP nanowires have structural defects of the type of twins and the reversal of crystallographic phases at the top and at the base. The results of structural measurements demonstrate that the nanowires are formed in the wurtzite phase, which is not typical of bulk III–V materials.

Authors:
 [1]; ; ;  [2]; ; ; ;  [3];  [1]
  1. ITMO University (Russian Federation)
  2. St. Petersburg Academic University, Russian Academy of Sciences (Russian Federation)
  3. Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22749725
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; CRYSTALLOGRAPHY; GRAPHENE; INDIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; NANOWIRES; SILICON CARBIDES; STACKING FAULTS; SUBSTRATES

Citation Formats

Reznik, R. R., E-mail: moment92@mail.ru, Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Lebedev, S. P., Lebedev, A. A., Kirilenko, D. A., Alexeev, P. A., and Cirlin, G. E. MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer. United States: N. p., 2018. Web. doi:10.1134/S1063782618110210.
Reznik, R. R., E-mail: moment92@mail.ru, Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Lebedev, S. P., Lebedev, A. A., Kirilenko, D. A., Alexeev, P. A., & Cirlin, G. E. MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer. United States. doi:10.1134/S1063782618110210.
Reznik, R. R., E-mail: moment92@mail.ru, Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Lebedev, S. P., Lebedev, A. A., Kirilenko, D. A., Alexeev, P. A., and Cirlin, G. E. Thu . "MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer". United States. doi:10.1134/S1063782618110210.
@article{osti_22749725,
title = {MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer},
author = {Reznik, R. R., E-mail: moment92@mail.ru and Kotlyar, K. P. and Ilkiv, I. V. and Soshnikov, I. P. and Lebedev, S. P. and Lebedev, A. A. and Kirilenko, D. A. and Alexeev, P. A. and Cirlin, G. E.},
abstractNote = {The possibility in principle of the MBE (molecular-beam epitaxy) growth of GaP and InP nanowires on a SiC substrate with a graphene layer is demonstrated for the first time. InP nanowires on such a substrate have no stacking faults and possess an ideal crystallographic quality. At the same time, GaP nanowires have structural defects of the type of twins and the reversal of crystallographic phases at the top and at the base. The results of structural measurements demonstrate that the nanowires are formed in the wurtzite phase, which is not typical of bulk III–V materials.},
doi = {10.1134/S1063782618110210},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 52,
place = {United States},
year = {2018},
month = {11}
}