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Title: Study of the Structural and Morphological Properties of HPHT Diamond Substrates

Abstract

The morphological and structural properties of a series of high-pressure high-temperature (HPHT) single-crystal diamond substrates are comprehensively studied by white-light optical interference microscopy, atomic-force microscopy, and X-ray diffraction analysis. Procedures that provide a means for characterizing the substrate parameters most critical for epitaxial application with the laboratory equipment are described. It is shown that the jewelry-type characterization of diamond substrates is insufficient to assess the possibility of their use for the epitaxial growth of chemical-vapor-deposited (CVD) diamond.

Authors:
; ;  [1];  [2];  [1];  [3]; ;  [1]
  1. Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)
  2. New Diamond Technology, Ltd. (Russian Federation)
  3. Institute of Applied Physics, Russian Academy of Sciences (Russian Federation)
Publication Date:
OSTI Identifier:
22749724
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DIAMONDS; EPITAXY; LABORATORY EQUIPMENT; PRESSURE RANGE MEGA PA 10-100; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K; X-RAY DIFFRACTION

Citation Formats

Yunin, P. A., E-mail: yunin@ipmras.ru, Volkov, P. V., Drozdov, Yu. N., Koliadin, A. V., Korolev, S. A., Radischev, D. B., Surovegina, E. A., and Shashkin, V. I. Study of the Structural and Morphological Properties of HPHT Diamond Substrates. United States: N. p., 2018. Web. doi:10.1134/S1063782618110271.
Yunin, P. A., E-mail: yunin@ipmras.ru, Volkov, P. V., Drozdov, Yu. N., Koliadin, A. V., Korolev, S. A., Radischev, D. B., Surovegina, E. A., & Shashkin, V. I. Study of the Structural and Morphological Properties of HPHT Diamond Substrates. United States. doi:10.1134/S1063782618110271.
Yunin, P. A., E-mail: yunin@ipmras.ru, Volkov, P. V., Drozdov, Yu. N., Koliadin, A. V., Korolev, S. A., Radischev, D. B., Surovegina, E. A., and Shashkin, V. I. Thu . "Study of the Structural and Morphological Properties of HPHT Diamond Substrates". United States. doi:10.1134/S1063782618110271.
@article{osti_22749724,
title = {Study of the Structural and Morphological Properties of HPHT Diamond Substrates},
author = {Yunin, P. A., E-mail: yunin@ipmras.ru and Volkov, P. V. and Drozdov, Yu. N. and Koliadin, A. V. and Korolev, S. A. and Radischev, D. B. and Surovegina, E. A. and Shashkin, V. I.},
abstractNote = {The morphological and structural properties of a series of high-pressure high-temperature (HPHT) single-crystal diamond substrates are comprehensively studied by white-light optical interference microscopy, atomic-force microscopy, and X-ray diffraction analysis. Procedures that provide a means for characterizing the substrate parameters most critical for epitaxial application with the laboratory equipment are described. It is shown that the jewelry-type characterization of diamond substrates is insufficient to assess the possibility of their use for the epitaxial growth of chemical-vapor-deposited (CVD) diamond.},
doi = {10.1134/S1063782618110271},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 52,
place = {United States},
year = {2018},
month = {11}
}