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Title: Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots

Abstract

A system of AlInAs- and InGaAs(111)-based quantum dots is studied. The use of wide-gap Al{sub x}In{sub 1–x}As alloys as a basis for quantum dots provides a means for substantially extending the spectral region of emission to shorter wavelengths, including the region close to 770 nm which is of interest for the engineering of aerospace systems of quantum cryptography. The fine structure of exciton states in AlInAs and InGaAs(111) quantum dots is studied. It is shown that, for a set of quantum dots, the splitting of exciton states is comparable to the natural width of exciton lines, which is of interest for the engineering of emitters of photon pairs on the basis of these quantum dots.

Authors:
; ; ; ;  [1]; ; ; ;  [2]
  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences (Russian Federation)
  2. Technische Universität Berlin, Institut für Festkörperphysik Eugene-Wigner-Gebäude (Germany)
Publication Date:
OSTI Identifier:
22749723
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; ARSENIC ALLOYS; BASES; EXCITONS; FINE STRUCTURE; GALLIUM ALLOYS; GALLIUM ARSENIDES; INDIUM ALLOYS; INDIUM ARSENIDES; QUANTUM CRYPTOGRAPHY; QUANTUM DOTS

Citation Formats

Derebezov, I. A., E-mail: derebezov@isp.nsc.ru, Gaisler, V. A., Gaisler, A. V., Dmitriev, D. V., Toropov, A. I., Helversen, M. von, Haye, C. de la, Bounouar, S., and Reitzenstein, S. Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots. United States: N. p., 2018. Web. doi:10.1134/S1063782618110064.
Derebezov, I. A., E-mail: derebezov@isp.nsc.ru, Gaisler, V. A., Gaisler, A. V., Dmitriev, D. V., Toropov, A. I., Helversen, M. von, Haye, C. de la, Bounouar, S., & Reitzenstein, S. Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots. United States. doi:10.1134/S1063782618110064.
Derebezov, I. A., E-mail: derebezov@isp.nsc.ru, Gaisler, V. A., Gaisler, A. V., Dmitriev, D. V., Toropov, A. I., Helversen, M. von, Haye, C. de la, Bounouar, S., and Reitzenstein, S. Thu . "Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots". United States. doi:10.1134/S1063782618110064.
@article{osti_22749723,
title = {Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots},
author = {Derebezov, I. A., E-mail: derebezov@isp.nsc.ru and Gaisler, V. A. and Gaisler, A. V. and Dmitriev, D. V. and Toropov, A. I. and Helversen, M. von and Haye, C. de la and Bounouar, S. and Reitzenstein, S.},
abstractNote = {A system of AlInAs- and InGaAs(111)-based quantum dots is studied. The use of wide-gap Al{sub x}In{sub 1–x}As alloys as a basis for quantum dots provides a means for substantially extending the spectral region of emission to shorter wavelengths, including the region close to 770 nm which is of interest for the engineering of aerospace systems of quantum cryptography. The fine structure of exciton states in AlInAs and InGaAs(111) quantum dots is studied. It is shown that, for a set of quantum dots, the splitting of exciton states is comparable to the natural width of exciton lines, which is of interest for the engineering of emitters of photon pairs on the basis of these quantum dots.},
doi = {10.1134/S1063782618110064},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 52,
place = {United States},
year = {2018},
month = {11}
}