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Title: Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics

Abstract

The formation and properties of locally tensile strained Ge microstructures (“microbridges”) based on Ge layers grown on silicon substrates are investigated. The elastic-strain distribution in suspended Ge microbridges is analyzed theoretically. This analysis indicates that, in order to attain the maximum tensile strain within a microbridge, the accumulation of strain in all corners of the fabricated microstructure has to be minimized. Measurements of the local strain using Raman scattering show significant enhancement of the tensile strain from 0.2–0.25% in the initial Ge film to ~2.4% in the Ge microbridges. A considerable increase in the luminescence intensity and significant modification of its spectrum in the regions of maximum tensile strain in Ge microbridges and in their vicinity as compared to weakly strained regions of the initial Ge film is demonstrated by microphotoluminescence spectroscopy.

Authors:
; ; ; ; ; ; ; ;  [1]; ;  [2]
  1. Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)
  2. Lobachevsky State University of Nizhny Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22749722
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GERMANIUM; MICROSTRUCTURE; RAMAN EFFECT; SILICON; STRAINS

Citation Formats

Novikov, A. V., E-mail: anov@ipmras.ru, Yurasov, D. V., Morozova, E. E., Skorohodov, E. V., Verbus, V. A., Yablonskiy, A. N., Baidakova, N. A., Gusev, N. S., Kudryavtsev, K. E., Nezhdanov, A. V., and Mashin, A. I. Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics. United States: N. p., 2018. Web. doi:10.1134/S1063782618110167.
Novikov, A. V., E-mail: anov@ipmras.ru, Yurasov, D. V., Morozova, E. E., Skorohodov, E. V., Verbus, V. A., Yablonskiy, A. N., Baidakova, N. A., Gusev, N. S., Kudryavtsev, K. E., Nezhdanov, A. V., & Mashin, A. I. Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics. United States. doi:10.1134/S1063782618110167.
Novikov, A. V., E-mail: anov@ipmras.ru, Yurasov, D. V., Morozova, E. E., Skorohodov, E. V., Verbus, V. A., Yablonskiy, A. N., Baidakova, N. A., Gusev, N. S., Kudryavtsev, K. E., Nezhdanov, A. V., and Mashin, A. I. Thu . "Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics". United States. doi:10.1134/S1063782618110167.
@article{osti_22749722,
title = {Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics},
author = {Novikov, A. V., E-mail: anov@ipmras.ru and Yurasov, D. V. and Morozova, E. E. and Skorohodov, E. V. and Verbus, V. A. and Yablonskiy, A. N. and Baidakova, N. A. and Gusev, N. S. and Kudryavtsev, K. E. and Nezhdanov, A. V. and Mashin, A. I.},
abstractNote = {The formation and properties of locally tensile strained Ge microstructures (“microbridges”) based on Ge layers grown on silicon substrates are investigated. The elastic-strain distribution in suspended Ge microbridges is analyzed theoretically. This analysis indicates that, in order to attain the maximum tensile strain within a microbridge, the accumulation of strain in all corners of the fabricated microstructure has to be minimized. Measurements of the local strain using Raman scattering show significant enhancement of the tensile strain from 0.2–0.25% in the initial Ge film to ~2.4% in the Ge microbridges. A considerable increase in the luminescence intensity and significant modification of its spectrum in the regions of maximum tensile strain in Ge microbridges and in their vicinity as compared to weakly strained regions of the initial Ge film is demonstrated by microphotoluminescence spectroscopy.},
doi = {10.1134/S1063782618110167},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 52,
place = {United States},
year = {2018},
month = {11}
}