skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices

Abstract

The radiation resistance to the gamma-neutron irradiation (~1 MeV) of diodes based on symmetric GaAs/AlAs 30-period superlattices is for the first time studied theoretically and experimentally. The model band diagram and equivalent circuit of the structure under study are used in calculations. Calculations are performed in the quasi-hydrodynamic approximation taking into account the heating of diodes under study by flowing current. The results of calculating the current–voltage characteristics and limiting operating frequencies of the diodes before and after gamma-neutron irradiation correlate well with the experimental data.

Authors:
 [1];  [2]; ;  [1]
  1. Lobachevsky State University of Nizhny Novgorod (Russian Federation)
  2. Submicron Heterostructures for Microelectronics, Research and Engineering Center,Russian Academy of Sciences (Russian Federation)
Publication Date:
OSTI Identifier:
22749721
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; ELECTRONIC STRUCTURE; EQUIVALENT CIRCUITS; GALLIUM ARSENIDES; MEV RANGE; NANOSTRUCTURES; SUPERLATTICES

Citation Formats

Pavelyev, D. G., E-mail: bess009@mail.ru, Vasilev, A. P., Kozlov, V. A., and Obolenskaya, E. S. Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices. United States: N. p., 2018. Web. doi:10.1134/S1063782618110192.
Pavelyev, D. G., E-mail: bess009@mail.ru, Vasilev, A. P., Kozlov, V. A., & Obolenskaya, E. S. Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices. United States. doi:10.1134/S1063782618110192.
Pavelyev, D. G., E-mail: bess009@mail.ru, Vasilev, A. P., Kozlov, V. A., and Obolenskaya, E. S. Thu . "Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices". United States. doi:10.1134/S1063782618110192.
@article{osti_22749721,
title = {Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices},
author = {Pavelyev, D. G., E-mail: bess009@mail.ru and Vasilev, A. P. and Kozlov, V. A. and Obolenskaya, E. S.},
abstractNote = {The radiation resistance to the gamma-neutron irradiation (~1 MeV) of diodes based on symmetric GaAs/AlAs 30-period superlattices is for the first time studied theoretically and experimentally. The model band diagram and equivalent circuit of the structure under study are used in calculations. Calculations are performed in the quasi-hydrodynamic approximation taking into account the heating of diodes under study by flowing current. The results of calculating the current–voltage characteristics and limiting operating frequencies of the diodes before and after gamma-neutron irradiation correlate well with the experimental data.},
doi = {10.1134/S1063782618110192},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 52,
place = {United States},
year = {2018},
month = {11}
}