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Title: Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

Abstract

Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of InAs/AlAs/GaAs/Si heterostructures exhibit bands defined by excitonic recombination in quantum dots and a wetting layer, i.e., a thin quantum well lying at the base of the array of quantum dots. Temperature quenching of the photoluminescence of quantum dots occurs due to the direct trapping of charge carriers at defects localized in the AlAs matrix, in the vicinity of the quantum dots.

Authors:
; ; ; ;  [1]
  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences (Russian Federation)
Publication Date:
OSTI Identifier:
22749718
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; CHARGE CARRIERS; GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM DOTS; QUANTUM WELLS; SUBSTRATES; TEMPERATURE RANGE 0065-0273 K

Citation Formats

Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R., and Shamirzaev, T. S., E-mail: tim@isp.nsc.ru. Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates. United States: N. p., 2018. Web. doi:10.1134/S1063782618110039.
Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R., & Shamirzaev, T. S., E-mail: tim@isp.nsc.ru. Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates. United States. doi:10.1134/S1063782618110039.
Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R., and Shamirzaev, T. S., E-mail: tim@isp.nsc.ru. Thu . "Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates". United States. doi:10.1134/S1063782618110039.
@article{osti_22749718,
title = {Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates},
author = {Abramkin, D. S. and Petrushkov, M. O. and Putyato, M. A. and Semyagin, B. R. and Shamirzaev, T. S., E-mail: tim@isp.nsc.ru},
abstractNote = {Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of InAs/AlAs/GaAs/Si heterostructures exhibit bands defined by excitonic recombination in quantum dots and a wetting layer, i.e., a thin quantum well lying at the base of the array of quantum dots. Temperature quenching of the photoluminescence of quantum dots occurs due to the direct trapping of charge carriers at defects localized in the AlAs matrix, in the vicinity of the quantum dots.},
doi = {10.1134/S1063782618110039},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 52,
place = {United States},
year = {2018},
month = {11}
}