skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates

Abstract

Hybrid laser structures with AlGaInAs quantum wells are grown by metalorganic vapor phase epitaxy on Ge/Si(100) “virtual” substrates using GaAs and InP buffer layers. Stimulated emission is achieved under optical pumping of the prepared samples in the range of 1.3–1.5 μm at liquid-nitrogen temperature. The stimulated-emission threshold is 30–70 kW/cm{sup 2}.

Authors:
; ; ;  [1]; ; ;  [2]; ;  [1]
  1. Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)
  2. “Polyus” Research Institute of M.F. Stelmakh Joint Stock Company (Russian Federation)
Publication Date:
OSTI Identifier:
22749717
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; GERMANIUM; INDIUM PHOSPHIDES; OPTICAL PUMPING; QUANTUM WELLS; STIMULATED EMISSION; SUBSTRATES; VAPOR PHASE EPITAXY

Citation Formats

Kudryatvsev, K. E., E-mail: konstantin@ipmras.ru, Dubinov, A. A., Aleshkin, V. Ya., Yurasov, D. V., Gorlachuk, P. V., Ryaboshtan, Yu. L., Marmalyuk, A. A., Novikov, A. V., and Krasilnik, Z. F. Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates. United States: N. p., 2018. Web. doi:10.1134/S1063782618110143.
Kudryatvsev, K. E., E-mail: konstantin@ipmras.ru, Dubinov, A. A., Aleshkin, V. Ya., Yurasov, D. V., Gorlachuk, P. V., Ryaboshtan, Yu. L., Marmalyuk, A. A., Novikov, A. V., & Krasilnik, Z. F. Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates. United States. doi:10.1134/S1063782618110143.
Kudryatvsev, K. E., E-mail: konstantin@ipmras.ru, Dubinov, A. A., Aleshkin, V. Ya., Yurasov, D. V., Gorlachuk, P. V., Ryaboshtan, Yu. L., Marmalyuk, A. A., Novikov, A. V., and Krasilnik, Z. F. Thu . "Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates". United States. doi:10.1134/S1063782618110143.
@article{osti_22749717,
title = {Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates},
author = {Kudryatvsev, K. E., E-mail: konstantin@ipmras.ru and Dubinov, A. A. and Aleshkin, V. Ya. and Yurasov, D. V. and Gorlachuk, P. V. and Ryaboshtan, Yu. L. and Marmalyuk, A. A. and Novikov, A. V. and Krasilnik, Z. F.},
abstractNote = {Hybrid laser structures with AlGaInAs quantum wells are grown by metalorganic vapor phase epitaxy on Ge/Si(100) “virtual” substrates using GaAs and InP buffer layers. Stimulated emission is achieved under optical pumping of the prepared samples in the range of 1.3–1.5 μm at liquid-nitrogen temperature. The stimulated-emission threshold is 30–70 kW/cm{sup 2}.},
doi = {10.1134/S1063782618110143},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 52,
place = {United States},
year = {2018},
month = {11}
}