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Title: On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation

Abstract

The relaxation rates of lower excited states 1s(T), 2p{sub 0}, 2s, 3p{sub 0}, and 2p{sub ±} of arsenic donors in a germanium crystal are calculated upon the interaction with long-wavelength acoustic phonons depending on the uniaxial stress in the crystallographic direction [111]. The populations of states under optical excitation are estimated for calculated times. It is shown theoretically that optical excitation of the medium forms an inverse population of arsenic donor levels and leads to the possibility of the implementation of a four-level laser scheme with the radiative transition between 2p states and the 1s triplet state at zero strain. The estimated value of the expected gain in the medium under optical excitation conditions by CO{sub 2} laser radiation in the medium at a donor concentration of 2 × 10{sup 15} cm{sup –3} is ~0.35 cm{sup –1} at a frequency of 1.98 THz if the laser transition is 2p{sub ±} → 1s(T) and 1.25 THz if the laser transition is 2p{sub 0} → 1s(T).

Authors:
;  [1]
  1. Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)
Publication Date:
OSTI Identifier:
22749706
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 12; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARSENIC; CARBON DIOXIDE LASERS; EXCITATION; EXCITED STATES; GERMANIUM; LASER RADIATION; P STATES; POPULATION INVERSION; RELAXATION; STRESSES

Citation Formats

Tsyplenkov, V. V., E-mail: Tsyplenkov1@yandex.ru, and Shastin, V. N. On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation. United States: N. p., 2018. Web. doi:10.1134/S1063782618120254.
Tsyplenkov, V. V., E-mail: Tsyplenkov1@yandex.ru, & Shastin, V. N. On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation. United States. doi:10.1134/S1063782618120254.
Tsyplenkov, V. V., E-mail: Tsyplenkov1@yandex.ru, and Shastin, V. N. Sat . "On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation". United States. doi:10.1134/S1063782618120254.
@article{osti_22749706,
title = {On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation},
author = {Tsyplenkov, V. V., E-mail: Tsyplenkov1@yandex.ru and Shastin, V. N.},
abstractNote = {The relaxation rates of lower excited states 1s(T), 2p{sub 0}, 2s, 3p{sub 0}, and 2p{sub ±} of arsenic donors in a germanium crystal are calculated upon the interaction with long-wavelength acoustic phonons depending on the uniaxial stress in the crystallographic direction [111]. The populations of states under optical excitation are estimated for calculated times. It is shown theoretically that optical excitation of the medium forms an inverse population of arsenic donor levels and leads to the possibility of the implementation of a four-level laser scheme with the radiative transition between 2p states and the 1s triplet state at zero strain. The estimated value of the expected gain in the medium under optical excitation conditions by CO{sub 2} laser radiation in the medium at a donor concentration of 2 × 10{sup 15} cm{sup –3} is ~0.35 cm{sup –1} at a frequency of 1.98 THz if the laser transition is 2p{sub ±} → 1s(T) and 1.25 THz if the laser transition is 2p{sub 0} → 1s(T).},
doi = {10.1134/S1063782618120254},
journal = {Semiconductors},
issn = {1063-7826},
number = 12,
volume = 52,
place = {United States},
year = {2018},
month = {12}
}