High pressure synthesis and thermoelectric properties of micro/nano structures CoSb{sub 3}
- FAW-Volkswagen Automotive Company Ltd, Changchun 130011 (China)
- Department of Material Science and Engineering, Changchun University of Science and Technology, Changchun 130022 (China)
- National Lab of Superhard Materials, Jinlin University, Changchun 130012 (China)
Nano-particle and defect have been proved to be effective in depressing the lattice thermal conductivity and improving the performance of thermoelectric materials. In this work, In{sub 0.5}Sn{sub x}Co{sub 4}Sb{sub 12} were prepared using a high pressure and high temperature (HPHT) method, In and Sn was assumed that In plays the role of a filler and occupies the Sb-icosahedron voids. Doping of In and Sn results in the defects, nanostructuring, and mesoscale structuring were all combined into a single skutterudite matrix. The thermoelectric properties were measured in the temperature range of 321–710 K. As expected, with the synthetic pressures increased，the thermal conductivity of samples improved significantly. The minimum value of In{sub 0.5}Sn{sub 0.4}Co{sub 4}Sb{sub 12} synthesized at 3.8 GPa is 1.79 Wm{sup −1} K{sup −1} and the highest Seebeck coefficient of sample In{sub 0.5}Sn{sub 0.2}Co{sub 4}Sb{sub 12} synthesized at 2.8 GPa reached 222 μV K{sup −1} finally. - Graphical abstract: Micro/nano structures CoSb{sub 3} could be quickly prepared by HPHT method, the defects, nanostructuring and mesoscale structuring are uniformly distributed in the whole sample. Display Omitted.
- OSTI ID:
- 22742057
- Journal Information:
- Journal of Solid State Chemistry, Vol. 255; Other Information: Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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