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Title: Thermochemistry and growth mechanism of SiC nanowires

Abstract

The chemical reaction thermodynamics and a novel two-stage growth mechanism of SiC nanowires synthesized by carbothermal reduction reactions were investigated based on the Si-C-O systems over a wide temperature range (1050 ≤ T ≤ 2000 K). The carbothermal reduction reaction process involves the fast formation of gaseous SiO and CO crucial intermediates, and the further carbon reduction of SiO to SiC. The relationship between the free energy changes and temperature at different pressures was also discussed. Some fundamental data in the work can help to analyze the thermochemistry of the carbothermal reduction reaction in the Si-C-O system, which is beneficial to optimize the temperature, pressure and the input precursors for controlling the SiC nanowire growth. - Graphical abstract: The chemical reaction thermodynamics of SiC nanowires synthesized by carbothermal reduction reactions was investigated, and a novel two-stage growth mechanism was proposed. The growth mechanism involved the formation of initial SiC embryos by heterogeneous nucleation and the growth of SiC nanowires by a gas-phase reaction. The process involved the fast formation of gaseous SiO and CO crucial intermediates, and the further carbon reduction of SiO to SiC. Display Omitted - Highlights: • The chemical reaction thermodynamics of SiC nanowires are investigated. •more » A novel two-stage growth mechanism of SiC nanowires is proposed. • The initial SiC particles/embryos can be formed by heterogeneous nucleation. • The gas-phase reaction of SiO and CO is the crucial step for the SiC nanowire growth.« less

Authors:
 [1];  [1];  [2];  [1];  [3]
  1. Department of Materials Engineering, College of Materials and Textile, Zhejiang Sci-Tech University, Hangzhou 310018 (China)
  2. Multi-disciplinary Materials Research Center, Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710049 (China)
  3. Intelligent Polymer Research Institute, University of Wollongong, Wollongong, NSW 2522 (Australia)
Publication Date:
OSTI Identifier:
22742037
Resource Type:
Journal Article
Journal Name:
Journal of Solid State Chemistry
Additional Journal Information:
Journal Volume: 253; Other Information: Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0022-4596
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; CARBON MONOXIDE; FREE ENERGY; NANOWIRES; REDUCTION; SILICON CARBIDES; SILICON OXIDES; TEMPERATURE RANGE; THERMODYNAMICS

Citation Formats

Chen, Jianjun, Ding, Lijuan, Xin, Lipeng, Zeng, Fan, and Chen, Jun. Thermochemistry and growth mechanism of SiC nanowires. United States: N. p., 2017. Web. doi:10.1016/J.JSSC.2017.06.009.
Chen, Jianjun, Ding, Lijuan, Xin, Lipeng, Zeng, Fan, & Chen, Jun. Thermochemistry and growth mechanism of SiC nanowires. United States. doi:10.1016/J.JSSC.2017.06.009.
Chen, Jianjun, Ding, Lijuan, Xin, Lipeng, Zeng, Fan, and Chen, Jun. Fri . "Thermochemistry and growth mechanism of SiC nanowires". United States. doi:10.1016/J.JSSC.2017.06.009.
@article{osti_22742037,
title = {Thermochemistry and growth mechanism of SiC nanowires},
author = {Chen, Jianjun and Ding, Lijuan and Xin, Lipeng and Zeng, Fan and Chen, Jun},
abstractNote = {The chemical reaction thermodynamics and a novel two-stage growth mechanism of SiC nanowires synthesized by carbothermal reduction reactions were investigated based on the Si-C-O systems over a wide temperature range (1050 ≤ T ≤ 2000 K). The carbothermal reduction reaction process involves the fast formation of gaseous SiO and CO crucial intermediates, and the further carbon reduction of SiO to SiC. The relationship between the free energy changes and temperature at different pressures was also discussed. Some fundamental data in the work can help to analyze the thermochemistry of the carbothermal reduction reaction in the Si-C-O system, which is beneficial to optimize the temperature, pressure and the input precursors for controlling the SiC nanowire growth. - Graphical abstract: The chemical reaction thermodynamics of SiC nanowires synthesized by carbothermal reduction reactions was investigated, and a novel two-stage growth mechanism was proposed. The growth mechanism involved the formation of initial SiC embryos by heterogeneous nucleation and the growth of SiC nanowires by a gas-phase reaction. The process involved the fast formation of gaseous SiO and CO crucial intermediates, and the further carbon reduction of SiO to SiC. Display Omitted - Highlights: • The chemical reaction thermodynamics of SiC nanowires are investigated. • A novel two-stage growth mechanism of SiC nanowires is proposed. • The initial SiC particles/embryos can be formed by heterogeneous nucleation. • The gas-phase reaction of SiO and CO is the crucial step for the SiC nanowire growth.},
doi = {10.1016/J.JSSC.2017.06.009},
journal = {Journal of Solid State Chemistry},
issn = {0022-4596},
number = ,
volume = 253,
place = {United States},
year = {2017},
month = {9}
}