Thermoelectric transport properties of BaBiTe{sub 3}-based materials

Zhou, Yiming; Zhao, Li-Dong

doi:10.1016/J.JSSC.2017.02.025

Title: Thermoelectric transport properties of BaBiTe{sub 3}-based materials

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Abstract

BaBiTe{sub 3}, a material with low thermal conductivity, is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. We choose two types of dopants, K and La, trying to optimize its electrical transport properties. The minority carriers, which harm the Seebeck coefficient in this system, are suppressed by La doping. With the increase of both electrical conductivity and Seebeck coefficient, the power factor of 3% La doped BaBiTe{sub 3} reaches 3.7 μW cm{sup −1} K{sup −2} which increased by 40% from undoped BaBiTe{sub 3}. Besides high power factor, the thermal conductivity is also reduced in it. Eventually, a high ZT value, 0.25 at 473 K, for n-type BaBiTe{sub 3} is achieved in 3% La doped BaBiTe{sub 3}. - Graphical abstract: BaBiTe{sub 3} possesses a low thermal conductivity. However, it is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. A high ZT value of 0.25 at 473 K for n-type BaBiTe{sub 3} can be achieved through optimizing electrical transport properties via La doping. - Highlights: • BaBiTe{sub 3} is an analogue of these promising thermoelectric materials: such as CsBi{sub 4}Te{sub 6} and K{sub 2}Bi{sub 8}Se{sub 13},more »« less

Authors:: Zhou, Yiming; Zhao, Li-Dong

Publication Date:: Mon May 15 00:00:00 EDT 2017

OSTI Identifier:: 22658269

Resource Type:: Journal Article

Journal Name:: Journal of Solid State Chemistry

Additional Journal Information:: Journal Volume: 249; Other Information: Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0022-4596

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; BARIUM COMPOUNDS; BISMUTH COMPOUNDS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; POWER FACTOR; TELLURIDES; THERMAL CONDUCTIVITY; THERMOELECTRIC MATERIALS

Citation Formats


                    Zhou, Yiming, and Zhao, Li-Dong. Thermoelectric transport properties of BaBiTe{sub 3}-based materials.  United States: N. p., 2017. 
        Web.  doi:10.1016/J.JSSC.2017.02.025.

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                    Zhou, Yiming, & Zhao, Li-Dong. Thermoelectric transport properties of BaBiTe{sub 3}-based materials.  United States.  https://doi.org/10.1016/J.JSSC.2017.02.025

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                    Zhou, Yiming, and Zhao, Li-Dong. 2017.  
        "Thermoelectric transport properties of BaBiTe{sub 3}-based materials".  United States.  https://doi.org/10.1016/J.JSSC.2017.02.025.

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@article{osti_22658269,

  title        = {Thermoelectric transport properties of BaBiTe{sub 3}-based materials},

  author       = {Zhou, Yiming and Zhao, Li-Dong},

  abstractNote = {BaBiTe{sub 3}, a material with low thermal conductivity, is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. We choose two types of dopants, K and La, trying to optimize its electrical transport properties. The minority carriers, which harm the Seebeck coefficient in this system, are suppressed by La doping. With the increase of both electrical conductivity and Seebeck coefficient, the power factor of 3% La doped BaBiTe{sub 3} reaches 3.7 μW cm{sup −1} K{sup −2} which increased by 40% from undoped BaBiTe{sub 3}. Besides high power factor, the thermal conductivity is also reduced in it. Eventually, a high ZT value, 0.25 at 473 K, for n-type BaBiTe{sub 3} is achieved in 3% La doped BaBiTe{sub 3}. - Graphical abstract: BaBiTe{sub 3} possesses a low thermal conductivity. However, it is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. A high ZT value of 0.25 at 473 K for n-type BaBiTe{sub 3} can be achieved through optimizing electrical transport properties via La doping. - Highlights: • BaBiTe{sub 3} is an analogue of these promising thermoelectric materials: such as CsBi{sub 4}Te{sub 6} and K{sub 2}Bi{sub 8}Se{sub 13}, etc. • BaBiTe{sub 3} possesses a low thermal conductivity. • La is an effective dopant to enhance electrical transport properties. • A high ZT value of 0.25 at 473 K can be achieved in n-type La-doped BaBiTe{sub 3}.},

  doi          = {10.1016/J.JSSC.2017.02.025},

  url          = {https://www.osti.gov/biblio/22658269},
  journal      = {Journal of Solid State Chemistry},

  issn         = {0022-4596},

  number       = ,

  volume       = 249,

  place        = {United States},

  year         = {Mon May 15 00:00:00 EDT 2017},

  month        = {Mon May 15 00:00:00 EDT 2017}

}

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