Defect chemistry and high-temperature transport in SrFe{sub 1−x}Sn{sub x}O{sub 3–δ}

Journal Article · Tue Nov 15 00:00:00 EST 2016 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1016/J.JSSC.2016.08.023· OSTI ID:22658099

Samigullin, R. R. ^[1]; Markov, A. A.; Leonidov, I. A.; Patrakeev, M. V. ^[2]

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1. Ural Federal University, 19 Mira Str., 620002 Yekaterinburg (Russian Federation)
2. Institute of Solid State Chemistry, UB RAS, 91 Pervomayskaya Str., 620990 Yekaterinburg (Russian Federation)

The electrical conductivity of SrFe{sub 1–x}Sn{sub x}O{sub 3–δ} (x=0.05, 0.10, 017) was measured by a four-probe dc technique in the partial oxygen pressure range of 10{sup –18}–0.5 atm at temperatures between 800 °Ð ÐŽ and 950 °Ð ÐŽ. The oxygen content in these oxides was measured under the same ambient conditions by means of coulometric titration. The thermodynamic analysis of oxygen nonstoichiometry data was carried out to determine the equilibrium constants for defect-formation reactions and to calculate the concentrations of ion and electron charge carriers. The partial contributions of oxygen ions, electrons and holes to charge transport were assessed, and the mobility of respective carriers was evaluated by an integral examination of the electrical conductivity and oxygen nonstoichiometry data. It has been found that the mobility of holes in SrFe{sub 1−x}Sn{sub x}O{sub 3−δ} varies in the range of ~0.005–0.04 cm{sup 2} V{sup −1} s{sup −1}, linearly increasing with the oxygen content and decreasing with increased tin concentration. The mobility of electron carriers was shown to be independent of the oxygen content. The average migration energy of an electron was estimated to be ~0.45 eV, with that of a hole being ~0.3 eV. - Highlights: • The conductivity and oxygen nonstoichiometry in SrFe{sub 1−x}Sn{sub x}O{sub 3−δ} were measured. • Tin substitution was found to affect insignificantly defect formation reactions. • The hole mobility was found to increase linearly with the oxygen content. • The hole mobility was found to be much higher than the electron mobility.

• OSTI ID: 22658099
• Journal Information: Journal of Solid State Chemistry, Vol. 243; Other Information: Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
CHARGE CARRIERS
CHARGE TRANSPORT
DEFECTS
ELECTRIC CONDUCTIVITY
ELECTRON MOBILITY
HOLE MOBILITY
IRON COMPOUNDS
OXIDES
OXYGEN IONS
PRESSURE RANGE
STRONTIUM COMPOUNDS
TEMPERATURE RANGE 0400-1000 K
TIN COMPOUNDS