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Title: Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

Abstract

The aim of this study is to explore the structural and optical properties of single-crystal GaAs(100) doped with Cr atoms by burning them into the substrate at high temperatures. The diffusion of chromium into single-crystal GaAs(100) substrates brings about the formation of a thin (~20–40 μm) GaAs:Cr transition layer. In this case, chromium atoms are incorporated into the gallium-arsenide crystal lattice and occupy the regular atomic sites of the metal sublattice. As the chromium diffusion time is increased, such behavior of the dopant impurity yields changes in the energy structure of GaAs, a decrease in the absorption at free charge carriers, and a lowering of the surface recombination rate. As a result, the photoluminescence signal from the sample is significantly enhanced.

Authors:
;  [1]; ; ;  [2];  [3]; ;  [4]
  1. Voronezh State University (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
  3. Benemérita Universidad Autonoma de Puebla, Instituto de Ciencias (Mexico)
  4. Karlsruhe Nano Micro Facility (Germany)
Publication Date:
OSTI Identifier:
22649751
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 50; Journal Issue: 7; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; CHARGE CARRIERS; CHROMIUM; CRYSTAL LATTICES; DIFFUSION; DOPED MATERIALS; GALLIUM ARSENIDES; LAYERS; MONOCRYSTALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RECOMBINATION; SUBSTRATES; SURFACES

Citation Formats

Seredin, P. V., E-mail: paul@phys.vsu.ru, Fedyukin, A. V., Arsentyev, I. N., Vavilova, L. S., Tarasov, I. S., Prutskij, T., Leiste, H., and Rinke, M. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium. United States: N. p., 2016. Web. doi:10.1134/S106378261607023X.
Seredin, P. V., E-mail: paul@phys.vsu.ru, Fedyukin, A. V., Arsentyev, I. N., Vavilova, L. S., Tarasov, I. S., Prutskij, T., Leiste, H., & Rinke, M. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium. United States. doi:10.1134/S106378261607023X.
Seredin, P. V., E-mail: paul@phys.vsu.ru, Fedyukin, A. V., Arsentyev, I. N., Vavilova, L. S., Tarasov, I. S., Prutskij, T., Leiste, H., and Rinke, M. Fri . "Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium". United States. doi:10.1134/S106378261607023X.
@article{osti_22649751,
title = {Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium},
author = {Seredin, P. V., E-mail: paul@phys.vsu.ru and Fedyukin, A. V. and Arsentyev, I. N. and Vavilova, L. S. and Tarasov, I. S. and Prutskij, T. and Leiste, H. and Rinke, M.},
abstractNote = {The aim of this study is to explore the structural and optical properties of single-crystal GaAs(100) doped with Cr atoms by burning them into the substrate at high temperatures. The diffusion of chromium into single-crystal GaAs(100) substrates brings about the formation of a thin (~20–40 μm) GaAs:Cr transition layer. In this case, chromium atoms are incorporated into the gallium-arsenide crystal lattice and occupy the regular atomic sites of the metal sublattice. As the chromium diffusion time is increased, such behavior of the dopant impurity yields changes in the energy structure of GaAs, a decrease in the absorption at free charge carriers, and a lowering of the surface recombination rate. As a result, the photoluminescence signal from the sample is significantly enhanced.},
doi = {10.1134/S106378261607023X},
journal = {Semiconductors},
issn = {1063-7826},
number = 7,
volume = 50,
place = {United States},
year = {2016},
month = {7}
}