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Title: Effect of thallium doping on the mobility of electrons in Bi{sub 2}Se{sub 3} and holes in Sb{sub 2}Te{sub 3}

Abstract

The Shubnikov–de Haas effect and the Hall effect in n-Bi{sub 2–x}Tl{sub x}Se{sub 3} (x = 0, 0.01, 0.02, 0.04) and p-Sb{sub 2–x}Tl{sub x}Te{sub 3} (x = 0, 0.005, 0.015, 0.05) single crystals are studied. The carrier mobilities and their changes upon Tl doping are calculated by the Fourier spectra of oscillations. It is found shown that Tl doping decreases the electron concentration in n-Bi{sub 2–x}Tl{sub x}Se{sub 3} and increases the electron mobility. In p-Sb{sub 2–x}Tl{sub x}Te{sub 3}, both the hole concentration and mobility decrease upon Tl doping. The change in the crystal defect concentration, which leads to these effects, is discussed.

Authors:
; ; ;  [1];  [2]
  1. Moscow State University, Faculty of Physics (Russian Federation)
  2. University of Calcutta, Department of Physics (India)
Publication Date:
OSTI Identifier:
22649749
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 7; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY TELLURIDES; BISMUTH SELENIDES; CARRIER MOBILITY; CONCENTRATION RATIO; CRYSTAL DEFECTS; ELECTRON MOBILITY; ELECTRONS; HALL EFFECT; HOLES; MONOCRYSTALS; OSCILLATIONS; P-TYPE CONDUCTORS; SHUBNIKOV-DE HAAS EFFECT; THALLIUM; THALLIUM COMPOUNDS

Citation Formats

Kudryashov, A. A., Kytin, V. G., Lunin, R. A., Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, and Banerjee, A. Effect of thallium doping on the mobility of electrons in Bi{sub 2}Se{sub 3} and holes in Sb{sub 2}Te{sub 3}. United States: N. p., 2016. Web. doi:10.1134/S1063782616070113.
Kudryashov, A. A., Kytin, V. G., Lunin, R. A., Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, & Banerjee, A. Effect of thallium doping on the mobility of electrons in Bi{sub 2}Se{sub 3} and holes in Sb{sub 2}Te{sub 3}. United States. doi:10.1134/S1063782616070113.
Kudryashov, A. A., Kytin, V. G., Lunin, R. A., Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, and Banerjee, A. 2016. "Effect of thallium doping on the mobility of electrons in Bi{sub 2}Se{sub 3} and holes in Sb{sub 2}Te{sub 3}". United States. doi:10.1134/S1063782616070113.
@article{osti_22649749,
title = {Effect of thallium doping on the mobility of electrons in Bi{sub 2}Se{sub 3} and holes in Sb{sub 2}Te{sub 3}},
author = {Kudryashov, A. A. and Kytin, V. G. and Lunin, R. A. and Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru and Banerjee, A.},
abstractNote = {The Shubnikov–de Haas effect and the Hall effect in n-Bi{sub 2–x}Tl{sub x}Se{sub 3} (x = 0, 0.01, 0.02, 0.04) and p-Sb{sub 2–x}Tl{sub x}Te{sub 3} (x = 0, 0.005, 0.015, 0.05) single crystals are studied. The carrier mobilities and their changes upon Tl doping are calculated by the Fourier spectra of oscillations. It is found shown that Tl doping decreases the electron concentration in n-Bi{sub 2–x}Tl{sub x}Se{sub 3} and increases the electron mobility. In p-Sb{sub 2–x}Tl{sub x}Te{sub 3}, both the hole concentration and mobility decrease upon Tl doping. The change in the crystal defect concentration, which leads to these effects, is discussed.},
doi = {10.1134/S1063782616070113},
journal = {Semiconductors},
number = 7,
volume = 50,
place = {United States},
year = 2016,
month = 7
}
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