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Title: Indium nanowires at the silicon surface

Abstract

Conductive indium nanowires up to 50 nm in width and up to 10 μm in length are fabricated on the surface of silicon by local resputtering from the probe of an atomic-force microscope. The transfer of indium from the probe of the atomic-force microscope onto the silicon surface is initiated by applying a potential between the probe and the surface as they approach each other to spacings, at which the mutual repulsive force is ~10{sup –7} N. The conductivity of the nanowires ranges from 7 × 10{sup –3} to 4 × 10{sup –2} Ω cm, which is several orders of magnitude lower than that in the case of the alternative technique of heat transfer.

Authors:
; ;  [1]
  1. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22649744
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 7; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; HEAT TRANSFER; INDIUM; NANOWIRES; PROBES; SILICON; SURFACES

Citation Formats

Kozhukhov, A. S., E-mail: antonkozhukhov@yandex.ru, Sheglov, D. V., and Latyshev, A. V. Indium nanowires at the silicon surface. United States: N. p., 2016. Web. doi:10.1134/S1063782616070095.
Kozhukhov, A. S., E-mail: antonkozhukhov@yandex.ru, Sheglov, D. V., & Latyshev, A. V. Indium nanowires at the silicon surface. United States. doi:10.1134/S1063782616070095.
Kozhukhov, A. S., E-mail: antonkozhukhov@yandex.ru, Sheglov, D. V., and Latyshev, A. V. 2016. "Indium nanowires at the silicon surface". United States. doi:10.1134/S1063782616070095.
@article{osti_22649744,
title = {Indium nanowires at the silicon surface},
author = {Kozhukhov, A. S., E-mail: antonkozhukhov@yandex.ru and Sheglov, D. V. and Latyshev, A. V.},
abstractNote = {Conductive indium nanowires up to 50 nm in width and up to 10 μm in length are fabricated on the surface of silicon by local resputtering from the probe of an atomic-force microscope. The transfer of indium from the probe of the atomic-force microscope onto the silicon surface is initiated by applying a potential between the probe and the surface as they approach each other to spacings, at which the mutual repulsive force is ~10{sup –7} N. The conductivity of the nanowires ranges from 7 × 10{sup –3} to 4 × 10{sup –2} Ω cm, which is several orders of magnitude lower than that in the case of the alternative technique of heat transfer.},
doi = {10.1134/S1063782616070095},
journal = {Semiconductors},
number = 7,
volume = 50,
place = {United States},
year = 2016,
month = 7
}
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