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Title: Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth

Abstract

Indium-antimonide quantum dots (7–9 × 10{sup 9} cm{sup 2}) are produced on an InAs(001) substrate by metal-organic vapor-phase epitaxy at a temperature of T = 440°C. Epitaxial deposition occurred simultaneously onto an InAs binary matrix and an InAsSbP quaternary alloy matrix layer lattice-matched to the InAs substrate in terms of the lattice parameter. Transformation of the quantum-dot shape and size is studied in relation to the chemical composition of the working matrix surface, onto which the quantum dots are deposited. The use of a multicomponent layer makes it possible to control the lattice parameter of the matrix and the strains produced in the system during the formation of self-assembled quantum dots.

Authors:
; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22649742
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 7; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL COMPOSITION; INDIUM; INDIUM ANTIMONIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LATTICE PARAMETERS; LAYERS; MATRIX MATERIALS; ORGANOMETALLIC COMPOUNDS; QUANTUM DOTS; QUATERNARY ALLOY SYSTEMS; STRAINS; SUBSTRATES; SURFACES; VAPOR PHASE EPITAXY

Citation Formats

Romanov, V. V., Dement’ev, P. A., and Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru. Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth. United States: N. p., 2016. Web. doi:10.1134/S1063782616070216.
Romanov, V. V., Dement’ev, P. A., & Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru. Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth. United States. doi:10.1134/S1063782616070216.
Romanov, V. V., Dement’ev, P. A., and Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru. 2016. "Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth". United States. doi:10.1134/S1063782616070216.
@article{osti_22649742,
title = {Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth},
author = {Romanov, V. V. and Dement’ev, P. A. and Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru},
abstractNote = {Indium-antimonide quantum dots (7–9 × 10{sup 9} cm{sup 2}) are produced on an InAs(001) substrate by metal-organic vapor-phase epitaxy at a temperature of T = 440°C. Epitaxial deposition occurred simultaneously onto an InAs binary matrix and an InAsSbP quaternary alloy matrix layer lattice-matched to the InAs substrate in terms of the lattice parameter. Transformation of the quantum-dot shape and size is studied in relation to the chemical composition of the working matrix surface, onto which the quantum dots are deposited. The use of a multicomponent layer makes it possible to control the lattice parameter of the matrix and the strains produced in the system during the formation of self-assembled quantum dots.},
doi = {10.1134/S1063782616070216},
journal = {Semiconductors},
number = 7,
volume = 50,
place = {United States},
year = 2016,
month = 7
}
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