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Title: Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure

Abstract

The terahertz electroluminescence from Cd{sub 0.7}Hg{sub 0.3}Te/HgTe quantum wells with an inverted band structure in lateral electric fields is experimentally detected and studied. The emission-spectrum maximum for wells 6.5 and 7 nm wide is near 6 meV which corresponds to interband optical transitions. The emission is explained by state depletion in the valence band and conduction band filling due to Zener tunneling, which is confirmed by power-law current–voltage characteristics.

Authors:
 [1];  [2]; ; ; ;  [1]; ;  [3];  [4]; ; ;  [5]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
  2. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
  3. Peter the Great Saint-Petersburg Polytechnic University (Russian Federation)
  4. Ustinov Baltic State Technical University “VOENMEKh” (Russian Federation)
  5. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
Publication Date:
OSTI Identifier:
22649741
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 7; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ELECTRONIC STRUCTURE; EMISSION SPECTRA; MERCURY TELLURIDES; QUANTUM WELLS; THZ RANGE; TUNNEL EFFECT; VALENCE

Citation Formats

Vasilyev, Yu. B., E-mail: Yu.Vasilyev@mail.ioffe.ru, Mikhailov, N. N., Vasilyeva, G. Yu., Ivánov, Yu. L., Zakhar’in, A. O., Andrianov, A. V., Vorobiev, L. E., Firsov, D. A., Grigoriev, M. N., Antonov, A. V., Ikonnikov, A. V., and Gavrilenko, V. I. Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure. United States: N. p., 2016. Web. doi:10.1134/S1063782616070253.
Vasilyev, Yu. B., E-mail: Yu.Vasilyev@mail.ioffe.ru, Mikhailov, N. N., Vasilyeva, G. Yu., Ivánov, Yu. L., Zakhar’in, A. O., Andrianov, A. V., Vorobiev, L. E., Firsov, D. A., Grigoriev, M. N., Antonov, A. V., Ikonnikov, A. V., & Gavrilenko, V. I. Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure. United States. doi:10.1134/S1063782616070253.
Vasilyev, Yu. B., E-mail: Yu.Vasilyev@mail.ioffe.ru, Mikhailov, N. N., Vasilyeva, G. Yu., Ivánov, Yu. L., Zakhar’in, A. O., Andrianov, A. V., Vorobiev, L. E., Firsov, D. A., Grigoriev, M. N., Antonov, A. V., Ikonnikov, A. V., and Gavrilenko, V. I. Fri . "Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure". United States. doi:10.1134/S1063782616070253.
@article{osti_22649741,
title = {Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure},
author = {Vasilyev, Yu. B., E-mail: Yu.Vasilyev@mail.ioffe.ru and Mikhailov, N. N. and Vasilyeva, G. Yu. and Ivánov, Yu. L. and Zakhar’in, A. O. and Andrianov, A. V. and Vorobiev, L. E. and Firsov, D. A. and Grigoriev, M. N. and Antonov, A. V. and Ikonnikov, A. V. and Gavrilenko, V. I.},
abstractNote = {The terahertz electroluminescence from Cd{sub 0.7}Hg{sub 0.3}Te/HgTe quantum wells with an inverted band structure in lateral electric fields is experimentally detected and studied. The emission-spectrum maximum for wells 6.5 and 7 nm wide is near 6 meV which corresponds to interband optical transitions. The emission is explained by state depletion in the valence band and conduction band filling due to Zener tunneling, which is confirmed by power-law current–voltage characteristics.},
doi = {10.1134/S1063782616070253},
journal = {Semiconductors},
number = 7,
volume = 50,
place = {United States},
year = {Fri Jul 15 00:00:00 EDT 2016},
month = {Fri Jul 15 00:00:00 EDT 2016}
}