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Title: Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

Abstract

Silicon nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 (below the melting threshold) to 250 mJ/cm{sup 2} (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser-annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR) range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous-matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.

Authors:
; ; ;  [1]; ;  [2];  [3]; ;  [2]
  1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
  2. Institute of Physics ASCR (Czech Republic)
  3. Institute of Chemical Process Fundamentals of the ASCR (Czech Republic)
Publication Date:
OSTI Identifier:
22649738
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 7; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; ANNEALING; ELECTROLUMINESCENCE; HYDROGENATION; INTERFACES; IRRADIATION; LASER RADIATION; LAYERS; LIGHT EMITTING DIODES; MATRIX MATERIALS; NANOSTRUCTURES; OPTICAL PROPERTIES; PHONONS; RAMAN SPECTRA; SEMICONDUCTOR JUNCTIONS; SILICON; SUBSTRATES

Citation Formats

Krivyakin, G. K., Volodin, V. A., E-mail: volodin@isp.nsc.ru, Kochubei, S. A., Kamaev, G. N., Purkrt, A., Remes, Z., Fajgar, R., Stuchliková, T. H., and Stuchlik, J. Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing. United States: N. p., 2016. Web. doi:10.1134/S1063782616070101.
Krivyakin, G. K., Volodin, V. A., E-mail: volodin@isp.nsc.ru, Kochubei, S. A., Kamaev, G. N., Purkrt, A., Remes, Z., Fajgar, R., Stuchliková, T. H., & Stuchlik, J. Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing. United States. doi:10.1134/S1063782616070101.
Krivyakin, G. K., Volodin, V. A., E-mail: volodin@isp.nsc.ru, Kochubei, S. A., Kamaev, G. N., Purkrt, A., Remes, Z., Fajgar, R., Stuchliková, T. H., and Stuchlik, J. 2016. "Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing". United States. doi:10.1134/S1063782616070101.
@article{osti_22649738,
title = {Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing},
author = {Krivyakin, G. K. and Volodin, V. A., E-mail: volodin@isp.nsc.ru and Kochubei, S. A. and Kamaev, G. N. and Purkrt, A. and Remes, Z. and Fajgar, R. and Stuchliková, T. H. and Stuchlik, J.},
abstractNote = {Silicon nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 (below the melting threshold) to 250 mJ/cm{sup 2} (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser-annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR) range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous-matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.},
doi = {10.1134/S1063782616070101},
journal = {Semiconductors},
number = 7,
volume = 50,
place = {United States},
year = 2016,
month = 7
}
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