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Title: Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si

Abstract

The depth distributions of structural damage induced in Si at room temperature by the implantation of P and PF{sub 4} with energies from 0.6 to 3.2 keV/amu are experimentally studied in a wide range of doses. It is found that, in all cases, the implantation of molecular PF{sub 4} ions forms practically single-mode defect distributions, with maximum at the target surface. This effect is caused by an increase in the generation of primary defects at the surface of the target. Individual cascades formed by atoms comprising molecule effectively overlap in the surface vicinity; this overlap gives rise to nonlinear processes in combined cascades due to a high density of displacements in such cascades. Quantitative estimation of increase of effectiveness of point defect generation by PF{sub 4} ions in respect to P ions is done on the base of experimental data.

Authors:
; ;  [1]
  1. St. Petersburg State Polytechnic University (Russian Federation)
Publication Date:
OSTI Identifier:
22649733
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 8; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC DISPLACEMENTS; ATOMS; ION BEAMS; ION IMPLANTATION; KEV RANGE; MOLECULES; PHOSPHORUS IONS; POINT DEFECTS; SILICON; SPATIAL DISTRIBUTION; SURFACES; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Karabeshkin, K. V., E-mail: yanikolaus@yandex.ru, Karaseov, P. A., and Titov, A. I.. Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si. United States: N. p., 2016. Web. doi:10.1134/S1063782616080145.
Karabeshkin, K. V., E-mail: yanikolaus@yandex.ru, Karaseov, P. A., & Titov, A. I.. Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si. United States. doi:10.1134/S1063782616080145.
Karabeshkin, K. V., E-mail: yanikolaus@yandex.ru, Karaseov, P. A., and Titov, A. I.. 2016. "Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si". United States. doi:10.1134/S1063782616080145.
@article{osti_22649733,
title = {Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si},
author = {Karabeshkin, K. V., E-mail: yanikolaus@yandex.ru and Karaseov, P. A. and Titov, A. I.},
abstractNote = {The depth distributions of structural damage induced in Si at room temperature by the implantation of P and PF{sub 4} with energies from 0.6 to 3.2 keV/amu are experimentally studied in a wide range of doses. It is found that, in all cases, the implantation of molecular PF{sub 4} ions forms practically single-mode defect distributions, with maximum at the target surface. This effect is caused by an increase in the generation of primary defects at the surface of the target. Individual cascades formed by atoms comprising molecule effectively overlap in the surface vicinity; this overlap gives rise to nonlinear processes in combined cascades due to a high density of displacements in such cascades. Quantitative estimation of increase of effectiveness of point defect generation by PF{sub 4} ions in respect to P ions is done on the base of experimental data.},
doi = {10.1134/S1063782616080145},
journal = {Semiconductors},
number = 8,
volume = 50,
place = {United States},
year = 2016,
month = 8
}
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