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Title: Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma

Abstract

The photoluminescence and optical absorption spectra and electrical properties of ZnO films grown by the metal–organic chemical vapor deposition and hydrothermal techniques, subjected to heat treatments and plasma treatment in a hydrogen atmosphere, are studied. It is shown that the adsorption of oxygen at grain boundaries upon annealing in an oxidizing atmosphere determines the electrical properties of the films. Vacuum annealing improves the electrical properties of the samples after degradation induced by annealing in air. Treatment in hydrogen plasma passivates surface states at the grain boundaries. The intrinsic photoluminescence intensity after plasma treatment is higher in the case of increased amounts of oxygen adsorbed at grain surfaces upon annealing in air. Surface states involving oxygen and hydrogen atoms are responsible for the high-intensity intrinsic photoluminescence band.

Authors:
;  [1];  [2]; ;  [1]; ;  [2];  [3];  [4]
  1. al-Farabi Kazakh National University, National Nanotechnology Laboratory of Open Type (Kazakhstan)
  2. Kazakh National Technical Research University (Kazakhstan)
  3. 200 University Avenue West, University of Waterloo (Canada)
  4. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22649730
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 8; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTRA; ADSORPTION; ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRICAL PROPERTIES; GRAIN BOUNDARIES; HYDROGEN; ORGANOMETALLIC COMPOUNDS; OXYGEN; PHOTOLUMINESCENCE; PLASMA; SURFACES; THIN FILMS; ZINC OXIDES

Citation Formats

Abdullin, Kh. A., Gabdullin, M. T., Gritsenko, L. V., Ismailov, D. V., Kalkozova, Zh. K., Kumekov, S. E., E-mail: skumekov@mail.ru, Mukash, Zh. O., Sazonov, A. Yu., and Terukov, E. I. Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma. United States: N. p., 2016. Web. doi:10.1134/S1063782616080029.
Abdullin, Kh. A., Gabdullin, M. T., Gritsenko, L. V., Ismailov, D. V., Kalkozova, Zh. K., Kumekov, S. E., E-mail: skumekov@mail.ru, Mukash, Zh. O., Sazonov, A. Yu., & Terukov, E. I. Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma. United States. doi:10.1134/S1063782616080029.
Abdullin, Kh. A., Gabdullin, M. T., Gritsenko, L. V., Ismailov, D. V., Kalkozova, Zh. K., Kumekov, S. E., E-mail: skumekov@mail.ru, Mukash, Zh. O., Sazonov, A. Yu., and Terukov, E. I. 2016. "Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma". United States. doi:10.1134/S1063782616080029.
@article{osti_22649730,
title = {Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma},
author = {Abdullin, Kh. A. and Gabdullin, M. T. and Gritsenko, L. V. and Ismailov, D. V. and Kalkozova, Zh. K. and Kumekov, S. E., E-mail: skumekov@mail.ru and Mukash, Zh. O. and Sazonov, A. Yu. and Terukov, E. I.},
abstractNote = {The photoluminescence and optical absorption spectra and electrical properties of ZnO films grown by the metal–organic chemical vapor deposition and hydrothermal techniques, subjected to heat treatments and plasma treatment in a hydrogen atmosphere, are studied. It is shown that the adsorption of oxygen at grain boundaries upon annealing in an oxidizing atmosphere determines the electrical properties of the films. Vacuum annealing improves the electrical properties of the samples after degradation induced by annealing in air. Treatment in hydrogen plasma passivates surface states at the grain boundaries. The intrinsic photoluminescence intensity after plasma treatment is higher in the case of increased amounts of oxygen adsorbed at grain surfaces upon annealing in air. Surface states involving oxygen and hydrogen atoms are responsible for the high-intensity intrinsic photoluminescence band.},
doi = {10.1134/S1063782616080029},
journal = {Semiconductors},
number = 8,
volume = 50,
place = {United States},
year = 2016,
month = 8
}
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