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Title: Conduction in titanium dioxide films and metal–TiO{sub 2}–Si structures

Abstract

The effect of the annealing of titanium oxide films on the electrical properties of metal–TiO{sub 2}–n-Si structures is investigated. It is shown that, regardless of the annealing temperature, the conductivity of the structures at positive gate potentials is determined by the space-charge-limited current in the insulator with traps exponentially distributed in terms of energy. At negative gate potentials, the main contribution to the current is provided by the generation of electron–hole pairs in the space-charge region in silicon. The properties of the TiO{sub 2}/n-Si interface depend on the structure and phase state of the oxide film, which are determined by the annealing temperature.

Authors:
; ; ;  [1]
  1. National Research Tomsk State University (Russian Federation)
Publication Date:
OSTI Identifier:
22649729
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 8; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRONS; HOLES; INTERFACES; N-TYPE CONDUCTORS; POTENTIALS; SILICON; SPACE CHARGE; THIN FILMS; TITANIUM OXIDES; TRAPS

Citation Formats

Kalygina, V. M., Egorova, I. M., Prudaev, I. A., and Tolbanov, O. P. Conduction in titanium dioxide films and metal–TiO{sub 2}–Si structures. United States: N. p., 2016. Web. doi:10.1134/S1063782616080133.
Kalygina, V. M., Egorova, I. M., Prudaev, I. A., & Tolbanov, O. P. Conduction in titanium dioxide films and metal–TiO{sub 2}–Si structures. United States. doi:10.1134/S1063782616080133.
Kalygina, V. M., Egorova, I. M., Prudaev, I. A., and Tolbanov, O. P. Mon . "Conduction in titanium dioxide films and metal–TiO{sub 2}–Si structures". United States. doi:10.1134/S1063782616080133.
@article{osti_22649729,
title = {Conduction in titanium dioxide films and metal–TiO{sub 2}–Si structures},
author = {Kalygina, V. M. and Egorova, I. M. and Prudaev, I. A. and Tolbanov, O. P.},
abstractNote = {The effect of the annealing of titanium oxide films on the electrical properties of metal–TiO{sub 2}–n-Si structures is investigated. It is shown that, regardless of the annealing temperature, the conductivity of the structures at positive gate potentials is determined by the space-charge-limited current in the insulator with traps exponentially distributed in terms of energy. At negative gate potentials, the main contribution to the current is provided by the generation of electron–hole pairs in the space-charge region in silicon. The properties of the TiO{sub 2}/n-Si interface depend on the structure and phase state of the oxide film, which are determined by the annealing temperature.},
doi = {10.1134/S1063782616080133},
journal = {Semiconductors},
number = 8,
volume = 50,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2016},
month = {Mon Aug 15 00:00:00 EDT 2016}
}