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Title: Transition times between the extremum points of the current–voltage characteristic of a resonant tunneling diode with hysteresis

Abstract

A numerical solution to the problem of transient processes in a resonant tunneling diode featuring a current–voltage characteristic with hysteresis is found for the first time in the context of a coherent model (based on the coupled Schrödinger and Poisson equations) taking into account the Fermi distribution of electrons. The transitions from the high-current to the low-current state and vice versa, which result from the existence of hysteresis and are of great practical importance for ultrafast switches based on resonant tunneling diodes, are studied in detail. It is shown that the transition times for such processes initiated by the application of a small voltage can significantly exceed the characteristic time ℏ/Γ (where G is the width of the resonance level). It is established for the first time that the transition time can be reduced and made as short as the characteristic time ℏ/Γ by applying a sufficiently high voltage. For the parameters of the resonant-tunnelingdiode structure considered in this study, the required voltage is about 0.01 V.

Authors:
;  [1]
  1. National Research Nuclear University “MEPhI” (Russian Federation)
Publication Date:
OSTI Identifier:
22649722
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 8; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRONS; HYSTERESIS; POISSON EQUATION; SCHROEDINGER EQUATION; TRANSIENTS; TUNNEL DIODES; TUNNEL EFFECT

Citation Formats

Grishakov, K. S., E-mail: ksgrishakov@yahoo.com, and Elesin, V. F.. Transition times between the extremum points of the current–voltage characteristic of a resonant tunneling diode with hysteresis. United States: N. p., 2016. Web. doi:10.1134/S1063782616080121.
Grishakov, K. S., E-mail: ksgrishakov@yahoo.com, & Elesin, V. F.. Transition times between the extremum points of the current–voltage characteristic of a resonant tunneling diode with hysteresis. United States. doi:10.1134/S1063782616080121.
Grishakov, K. S., E-mail: ksgrishakov@yahoo.com, and Elesin, V. F.. 2016. "Transition times between the extremum points of the current–voltage characteristic of a resonant tunneling diode with hysteresis". United States. doi:10.1134/S1063782616080121.
@article{osti_22649722,
title = {Transition times between the extremum points of the current–voltage characteristic of a resonant tunneling diode with hysteresis},
author = {Grishakov, K. S., E-mail: ksgrishakov@yahoo.com and Elesin, V. F.},
abstractNote = {A numerical solution to the problem of transient processes in a resonant tunneling diode featuring a current–voltage characteristic with hysteresis is found for the first time in the context of a coherent model (based on the coupled Schrödinger and Poisson equations) taking into account the Fermi distribution of electrons. The transitions from the high-current to the low-current state and vice versa, which result from the existence of hysteresis and are of great practical importance for ultrafast switches based on resonant tunneling diodes, are studied in detail. It is shown that the transition times for such processes initiated by the application of a small voltage can significantly exceed the characteristic time ℏ/Γ (where G is the width of the resonance level). It is established for the first time that the transition time can be reduced and made as short as the characteristic time ℏ/Γ by applying a sufficiently high voltage. For the parameters of the resonant-tunnelingdiode structure considered in this study, the required voltage is about 0.01 V.},
doi = {10.1134/S1063782616080121},
journal = {Semiconductors},
number = 8,
volume = 50,
place = {United States},
year = 2016,
month = 8
}
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