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Title: Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation

Abstract

We investigate the efficiency of the introduction of a porous layer into the substrate of a silicon-onsapphire structure by the implantation of He ions to enhance the radiation resistance of devices. The properties of the introduced layer and its parameters affecting the concentration of minority charge carriers generated by irradiation are analyzed. The reported results of the analysis and calculations can be used to optimize He-ion implantation conditions during the formation of a porous layer.

Authors:
; ;  [1]
  1. National Research Center “Kurchatov Institute,” (Russian Federation)
Publication Date:
OSTI Identifier:
22649720
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 8; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; CONCENTRATION RATIO; HELIUM IONS; ION IMPLANTATION; IRRADIATION; LAYERS; POROUS MATERIALS; SAPPHIRE; SILICON; SUBSTRATES

Citation Formats

Aleksandrov, P. A., E-mail: Alexandrov-PA@nrcki.ru, Baranova, E. K., and Budaragin, V. V.. Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation. United States: N. p., 2016. Web. doi:10.1134/S1063782616080054.
Aleksandrov, P. A., E-mail: Alexandrov-PA@nrcki.ru, Baranova, E. K., & Budaragin, V. V.. Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation. United States. doi:10.1134/S1063782616080054.
Aleksandrov, P. A., E-mail: Alexandrov-PA@nrcki.ru, Baranova, E. K., and Budaragin, V. V.. 2016. "Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation". United States. doi:10.1134/S1063782616080054.
@article{osti_22649720,
title = {Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation},
author = {Aleksandrov, P. A., E-mail: Alexandrov-PA@nrcki.ru and Baranova, E. K. and Budaragin, V. V.},
abstractNote = {We investigate the efficiency of the introduction of a porous layer into the substrate of a silicon-onsapphire structure by the implantation of He ions to enhance the radiation resistance of devices. The properties of the introduced layer and its parameters affecting the concentration of minority charge carriers generated by irradiation are analyzed. The reported results of the analysis and calculations can be used to optimize He-ion implantation conditions during the formation of a porous layer.},
doi = {10.1134/S1063782616080054},
journal = {Semiconductors},
number = 8,
volume = 50,
place = {United States},
year = 2016,
month = 8
}
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