skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies

Abstract

The distributions of hydrogen-containing donors in Ge{sub 1–x}Si{sub x} (0 ≤ x ≤ 0.06) alloys implanted with hydrogen ions with an energy of 200 and 300 keV and a dose of 1 × 10{sup 15} cm{sup –2} are studied. It is established that, at the higher ion energy, the limiting donor concentration after postimplantation heat treatment (275°C) is attained within ~30 min and, at the lower energy, within ~320 min. In contrast to donors formed near the surface, a portion of hydrogen-containing donors formed upon the implantation of ions with the higher energy possess the property of bistability. The limiting donor concentration is independent of the ion energy, but decreases from 1.3 × 10{sup 16} to 1.5 × 10{sup 15} cm{sup –3}, as the Si impurity content in the alloy is increased from x = 0.008 to x = 0.062. It is inferred that the observed differences arise from the participation of the surface in the donor formation process, since the surface significantly influences defect-formation processes involving radiation-induced defects, whose generation accompanies implantation.

Authors:
; ;  [1];  [2];  [3];  [4]; ;  [1]
  1. Belarusian State University (Belarus)
  2. University of Manchester (United Kingdom)
  3. Leibnitz Institute of Crystal Growth (Germany)
  4. Sevchenko Institute of Applied Physical Problems (Belarus)
Publication Date:
OSTI Identifier:
22649717
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 8; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CONCENTRATION RATIO; GERMANIUM ALLOYS; HEAT TREATMENTS; HYDROGEN; HYDROGEN IONS; ION IMPLANTATION; IRRADIATION; KEV RANGE; PHYSICAL RADIATION EFFECTS; SILICON; SILICON ALLOYS; SURFACES

Citation Formats

Pokotilo, Yu. M., E-mail: Pokotilo@bsu.by, Petukh, A. N., Litvinov, V. V., Markevich, V. P., Abrosimov, N. V., Kamyshan, A. S., Giro, A. V., and Solyanikova, K. A.. Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies. United States: N. p., 2016. Web. doi:10.1134/S1063782616080182.
Pokotilo, Yu. M., E-mail: Pokotilo@bsu.by, Petukh, A. N., Litvinov, V. V., Markevich, V. P., Abrosimov, N. V., Kamyshan, A. S., Giro, A. V., & Solyanikova, K. A.. Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies. United States. doi:10.1134/S1063782616080182.
Pokotilo, Yu. M., E-mail: Pokotilo@bsu.by, Petukh, A. N., Litvinov, V. V., Markevich, V. P., Abrosimov, N. V., Kamyshan, A. S., Giro, A. V., and Solyanikova, K. A.. Mon . "Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies". United States. doi:10.1134/S1063782616080182.
@article{osti_22649717,
title = {Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies},
author = {Pokotilo, Yu. M., E-mail: Pokotilo@bsu.by and Petukh, A. N. and Litvinov, V. V. and Markevich, V. P. and Abrosimov, N. V. and Kamyshan, A. S. and Giro, A. V. and Solyanikova, K. A.},
abstractNote = {The distributions of hydrogen-containing donors in Ge{sub 1–x}Si{sub x} (0 ≤ x ≤ 0.06) alloys implanted with hydrogen ions with an energy of 200 and 300 keV and a dose of 1 × 10{sup 15} cm{sup –2} are studied. It is established that, at the higher ion energy, the limiting donor concentration after postimplantation heat treatment (275°C) is attained within ~30 min and, at the lower energy, within ~320 min. In contrast to donors formed near the surface, a portion of hydrogen-containing donors formed upon the implantation of ions with the higher energy possess the property of bistability. The limiting donor concentration is independent of the ion energy, but decreases from 1.3 × 10{sup 16} to 1.5 × 10{sup 15} cm{sup –3}, as the Si impurity content in the alloy is increased from x = 0.008 to x = 0.062. It is inferred that the observed differences arise from the participation of the surface in the donor formation process, since the surface significantly influences defect-formation processes involving radiation-induced defects, whose generation accompanies implantation.},
doi = {10.1134/S1063782616080182},
journal = {Semiconductors},
number = 8,
volume = 50,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2016},
month = {Mon Aug 15 00:00:00 EDT 2016}
}