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Title: Electrical parameters of polycrystalline Sm{sub 1–x}Eu{sub x}S rare-earth semiconductors

Abstract

The electrical parameters of polycrystalline Sm{sub 1–x}Eu{sub x}S compounds are studied. The conductivity, concentration of free electrons, their mobility, and the conductivity activation energy are measured as functions of the quantity x. The structural parameters of the compounds are determined. A heterostructure is fabricated with x in the range from 0 to 0.3, and the electrical voltage generated by the structure, when heated to a temperature of T = 450 K, due to the thermovoltaic effect is measured. This voltage is found to be 55 mV. A method for measuring the thermally induced voltage is described. The method provides a means for separating the thermovoltaic effect from the Seebeck effect.

Authors:
; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22649713
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 9; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; CARRIER MOBILITY; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRONS; EUROPIUM COMPOUNDS; POLYCRYSTALS; SAMARIUM SULFIDES; SEEBECK EFFECT; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE

Citation Formats

Kaminskii, V. V., E-mail: vladimir.kaminski@mail.ioffe.ru, Kazanin, M. M., Romanova, M. V., Kamenskaya, G. A., and Sharenkova, N. V. Electrical parameters of polycrystalline Sm{sub 1–x}Eu{sub x}S rare-earth semiconductors. United States: N. p., 2016. Web. doi:10.1134/S1063782616090116.
Kaminskii, V. V., E-mail: vladimir.kaminski@mail.ioffe.ru, Kazanin, M. M., Romanova, M. V., Kamenskaya, G. A., & Sharenkova, N. V. Electrical parameters of polycrystalline Sm{sub 1–x}Eu{sub x}S rare-earth semiconductors. United States. doi:10.1134/S1063782616090116.
Kaminskii, V. V., E-mail: vladimir.kaminski@mail.ioffe.ru, Kazanin, M. M., Romanova, M. V., Kamenskaya, G. A., and Sharenkova, N. V. Thu . "Electrical parameters of polycrystalline Sm{sub 1–x}Eu{sub x}S rare-earth semiconductors". United States. doi:10.1134/S1063782616090116.
@article{osti_22649713,
title = {Electrical parameters of polycrystalline Sm{sub 1–x}Eu{sub x}S rare-earth semiconductors},
author = {Kaminskii, V. V., E-mail: vladimir.kaminski@mail.ioffe.ru and Kazanin, M. M. and Romanova, M. V. and Kamenskaya, G. A. and Sharenkova, N. V.},
abstractNote = {The electrical parameters of polycrystalline Sm{sub 1–x}Eu{sub x}S compounds are studied. The conductivity, concentration of free electrons, their mobility, and the conductivity activation energy are measured as functions of the quantity x. The structural parameters of the compounds are determined. A heterostructure is fabricated with x in the range from 0 to 0.3, and the electrical voltage generated by the structure, when heated to a temperature of T = 450 K, due to the thermovoltaic effect is measured. This voltage is found to be 55 mV. A method for measuring the thermally induced voltage is described. The method provides a means for separating the thermovoltaic effect from the Seebeck effect.},
doi = {10.1134/S1063782616090116},
journal = {Semiconductors},
number = 9,
volume = 50,
place = {United States},
year = {Thu Sep 15 00:00:00 EDT 2016},
month = {Thu Sep 15 00:00:00 EDT 2016}
}