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Title: Plasmon–phonon coupling in the infrared reflectance spectra of Bi{sub 2}Se{sub 3} films

Abstract

The results of studies of optical reflection in the far- and mid-infrared spectral regions are reported. The reflectance of five Bi{sub 2}Se{sub 3} topological insulator films grown by molecular-beam epitaxy on Si(111) substrates is measured. The characteristic parameters of phonons and plasmons are determined by means of dispersion analysis for multilayer structures. It is found that the plasma frequency in a layer close to the Si–film interface is noticeably higher than that in the film bulk. Calculations of the loss function show that plasmon–phonon coupling plays an important role in Bi{sub 2}Se{sub 3} films. The attenuated total internal reflection method is used to determine the frequency of the surface plasmon–phonon mode.

Authors:
;  [1];  [2]
  1. Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation)
  2. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22649712
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 9; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH SELENIDES; COUPLING; CRYSTAL STRUCTURE; INFRARED SPECTRA; INTERFACES; LANGMUIR FREQUENCY; LAYERS; MOLECULAR BEAM EPITAXY; OPTICAL REFLECTION; PHONONS; PLASMA; PLASMONS; SILICON; SUBSTRATES; THIN FILMS

Citation Formats

Novikova, N. N., Yakovlev, V. A., E-mail: yakovlev@isan.troitsk.ru, and Kucherenko, I. V., E-mail: kucheren@sci.lebedev.ru. Plasmon–phonon coupling in the infrared reflectance spectra of Bi{sub 2}Se{sub 3} films. United States: N. p., 2016. Web. doi:10.1134/S1063782616090190.
Novikova, N. N., Yakovlev, V. A., E-mail: yakovlev@isan.troitsk.ru, & Kucherenko, I. V., E-mail: kucheren@sci.lebedev.ru. Plasmon–phonon coupling in the infrared reflectance spectra of Bi{sub 2}Se{sub 3} films. United States. doi:10.1134/S1063782616090190.
Novikova, N. N., Yakovlev, V. A., E-mail: yakovlev@isan.troitsk.ru, and Kucherenko, I. V., E-mail: kucheren@sci.lebedev.ru. Thu . "Plasmon–phonon coupling in the infrared reflectance spectra of Bi{sub 2}Se{sub 3} films". United States. doi:10.1134/S1063782616090190.
@article{osti_22649712,
title = {Plasmon–phonon coupling in the infrared reflectance spectra of Bi{sub 2}Se{sub 3} films},
author = {Novikova, N. N. and Yakovlev, V. A., E-mail: yakovlev@isan.troitsk.ru and Kucherenko, I. V., E-mail: kucheren@sci.lebedev.ru},
abstractNote = {The results of studies of optical reflection in the far- and mid-infrared spectral regions are reported. The reflectance of five Bi{sub 2}Se{sub 3} topological insulator films grown by molecular-beam epitaxy on Si(111) substrates is measured. The characteristic parameters of phonons and plasmons are determined by means of dispersion analysis for multilayer structures. It is found that the plasma frequency in a layer close to the Si–film interface is noticeably higher than that in the film bulk. Calculations of the loss function show that plasmon–phonon coupling plays an important role in Bi{sub 2}Se{sub 3} films. The attenuated total internal reflection method is used to determine the frequency of the surface plasmon–phonon mode.},
doi = {10.1134/S1063782616090190},
journal = {Semiconductors},
number = 9,
volume = 50,
place = {United States},
year = {Thu Sep 15 00:00:00 EDT 2016},
month = {Thu Sep 15 00:00:00 EDT 2016}
}