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Title: Plasmon–phonon coupling in the infrared reflectance spectra of Bi{sub 2}Se{sub 3} films

Abstract

The results of studies of optical reflection in the far- and mid-infrared spectral regions are reported. The reflectance of five Bi{sub 2}Se{sub 3} topological insulator films grown by molecular-beam epitaxy on Si(111) substrates is measured. The characteristic parameters of phonons and plasmons are determined by means of dispersion analysis for multilayer structures. It is found that the plasma frequency in a layer close to the Si–film interface is noticeably higher than that in the film bulk. Calculations of the loss function show that plasmon–phonon coupling plays an important role in Bi{sub 2}Se{sub 3} films. The attenuated total internal reflection method is used to determine the frequency of the surface plasmon–phonon mode.

Authors:
;  [1];  [2]
  1. Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation)
  2. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22649712
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 9; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH SELENIDES; COUPLING; CRYSTAL STRUCTURE; INFRARED SPECTRA; INTERFACES; LANGMUIR FREQUENCY; LAYERS; MOLECULAR BEAM EPITAXY; OPTICAL REFLECTION; PHONONS; PLASMA; PLASMONS; SILICON; SUBSTRATES; THIN FILMS

Citation Formats

Novikova, N. N., Yakovlev, V. A., E-mail: yakovlev@isan.troitsk.ru, and Kucherenko, I. V., E-mail: kucheren@sci.lebedev.ru. Plasmon–phonon coupling in the infrared reflectance spectra of Bi{sub 2}Se{sub 3} films. United States: N. p., 2016. Web. doi:10.1134/S1063782616090190.
Novikova, N. N., Yakovlev, V. A., E-mail: yakovlev@isan.troitsk.ru, & Kucherenko, I. V., E-mail: kucheren@sci.lebedev.ru. Plasmon–phonon coupling in the infrared reflectance spectra of Bi{sub 2}Se{sub 3} films. United States. doi:10.1134/S1063782616090190.
Novikova, N. N., Yakovlev, V. A., E-mail: yakovlev@isan.troitsk.ru, and Kucherenko, I. V., E-mail: kucheren@sci.lebedev.ru. 2016. "Plasmon–phonon coupling in the infrared reflectance spectra of Bi{sub 2}Se{sub 3} films". United States. doi:10.1134/S1063782616090190.
@article{osti_22649712,
title = {Plasmon–phonon coupling in the infrared reflectance spectra of Bi{sub 2}Se{sub 3} films},
author = {Novikova, N. N. and Yakovlev, V. A., E-mail: yakovlev@isan.troitsk.ru and Kucherenko, I. V., E-mail: kucheren@sci.lebedev.ru},
abstractNote = {The results of studies of optical reflection in the far- and mid-infrared spectral regions are reported. The reflectance of five Bi{sub 2}Se{sub 3} topological insulator films grown by molecular-beam epitaxy on Si(111) substrates is measured. The characteristic parameters of phonons and plasmons are determined by means of dispersion analysis for multilayer structures. It is found that the plasma frequency in a layer close to the Si–film interface is noticeably higher than that in the film bulk. Calculations of the loss function show that plasmon–phonon coupling plays an important role in Bi{sub 2}Se{sub 3} films. The attenuated total internal reflection method is used to determine the frequency of the surface plasmon–phonon mode.},
doi = {10.1134/S1063782616090190},
journal = {Semiconductors},
number = 9,
volume = 50,
place = {United States},
year = 2016,
month = 9
}
  • Low energy optical modes of molecular beam epitaxy-grown In{sub 1-x}Ga{sub x}N thin films with 0<=x<=0.6 are investigated using infrared reflectance measurements. We found that the reflectance of the films for wave vectors in the range from 600 to 800 cm{sup -1} is determined by the high energy E{sub 1}(LO)-plasmon coupled modes. In the higher energy regime of the UV-visible reflectance spectrum of InN, critical points with energies 4.75, 5.36, and 6.12 eV belonging to A and B structures are observed. The energies of these critical points increase with increasing values of x, similar to the band gap energy of thesemore » films.« less
  • Optical phonons of multiferroic Bi{sub 4}Ti{sub 3}O{sub 12}-BiFeO{sub 3} ceramic have been investigated by low temperature Raman scattering and infrared reflectance spectra. Anomalies at about 85 K can be observed from the temperature dependence of the Raman and infrared modes, which arise from spin-phonon interaction during antiferromagnetic to paramagnetic phase transition. It was found that the change of exchange interaction in magnetic phase transition can be induced by Fe-O-Fe octahedral tilting driven from the A-site atoms. Moreover, ferroelectricity-related displacement of Bismuth atoms suggests the coupling of magnetic and ferroelectric orders.
  • Raman spectra of p-type In{sub 0.53}Ga{sub 0.47}As with doping levels ranging from p=2{times}10{sup 17} to 5{times}10{sup 19} cm{sup {minus}3} have been investigated. Analysis of the Raman line shape and its dependence on the free-hole density demonstrates four-mode behavior of optical phonons. Based on the oscillator strength and Faust-Henry factors of the optical phonons determined from the Raman data, and lattice-dynamic calculations of the phonon dispersion relations in ordered structures of InGaAs{sub 2}, we show a relationship between the observed four-mode behavior and short-range order phase-separation effects. {copyright} {ital 1997} {ital The American Physical Society}
  • The phonon-plasmon coupling of {ital p}-type, Ge-doped gallium arsenide films have been study using Raman spectroscopy. The films were grown epitaxially on (100) GaAs substrates by liquid phase epitaxy employing Ge as dopant at various concentrations, which resulted in films with hole densities in the range of 5{times}10{sup 17}{minus}5{times}10{sup 20} cm{sup {minus}3}. The Raman experiments were performed at near backscattering geometry at room temperature, 100 and 20 K. In the configuration employed only the LO mode is allowed. The intensity, frequency and linewidth of this mode have been discussed in terms of LO phonon-plasmon coupling due to impurity-induced Fr{umlt o}hlichmore » interaction and or deformation potential mechanisms. {copyright} {ital 1996 American Institute of Physics.}« less