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Title: Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

Abstract

In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

Authors:
; ; ;  [1];  [2];  [1];  [3]
  1. Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia)
  2. Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada)
  3. Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)
Publication Date:
OSTI Identifier:
22649711
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 9; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CAPACITANCE; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRONS; HOLES; HYSTERESIS; ILLUMINANCE; INTERFACES; LAYERS; NANOSTRUCTURES; PHOTOCURRENTS; PHOTODETECTORS; SILICON; SILICON OXIDES; TEMPERATURE RANGE 0273-0400 K; TRAPPING; TRAPS

Citation Formats

Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com, Troudi, M., Sghaier, N., Kalboussi, A., Aimez, V., Drouin, D., and Souifi, A. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector. United States: N. p., 2016. Web. doi:10.1134/S1063782616090062.
Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com, Troudi, M., Sghaier, N., Kalboussi, A., Aimez, V., Drouin, D., & Souifi, A. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector. United States. doi:10.1134/S1063782616090062.
Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com, Troudi, M., Sghaier, N., Kalboussi, A., Aimez, V., Drouin, D., and Souifi, A. 2016. "Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector". United States. doi:10.1134/S1063782616090062.
@article{osti_22649711,
title = {Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector},
author = {Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com and Troudi, M. and Sghaier, N. and Kalboussi, A. and Aimez, V. and Drouin, D. and Souifi, A.},
abstractNote = {In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.},
doi = {10.1134/S1063782616090062},
journal = {Semiconductors},
number = 9,
volume = 50,
place = {United States},
year = 2016,
month = 9
}
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