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Title: Dielectric properties of layered FeGaInS{sub 4} single crystals in an alternating electric field

Abstract

The results of investigations of the frequency and temperature dependences of dielectric losses and the imaginary part of the dielectric permittivity in FeGaInS{sub 4} single crystals are presented. Their experimental values are determined. It is established that the loss tangent and the imaginary part of the permittivity of FeGaInS{sub 4} single crystals in a field with frequencies of 10{sup 4}–10{sup 6} Hz decrease inversely proportional to the frequency (tanδ ~ 1/ω), and the conductivity is characterized by the band–hopping mechanism. For FeGaInS{sub 4}, the relaxation time is calculated, and it is established that there is a mechanism of electron polarization caused by thermal motion in this crystal.

Authors:
 [1];  [2]
  1. Azerbaijan National Academy of Sciences, Nagiyev Institute of Catalysis and Inorganic Chemistry (Azerbaijan)
  2. Azerbaijan State Pedagogical University (Azerbaijan)
Publication Date:
OSTI Identifier:
22649705
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 9; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTRONS; FREQUENCY DEPENDENCE; GALLIUM COMPOUNDS; INDIUM SULFIDES; IRON COMPOUNDS; MONOCRYSTALS; PERMITTIVITY; POLARIZATION; RELAXATION LOSSES; RELAXATION TIME; TEMPERATURE DEPENDENCE

Citation Formats

Mammadov, F. M., and Niftiyev, N. N., E-mail: namiq7@bk.ru. Dielectric properties of layered FeGaInS{sub 4} single crystals in an alternating electric field. United States: N. p., 2016. Web. doi:10.1134/S1063782616090165.
Mammadov, F. M., & Niftiyev, N. N., E-mail: namiq7@bk.ru. Dielectric properties of layered FeGaInS{sub 4} single crystals in an alternating electric field. United States. doi:10.1134/S1063782616090165.
Mammadov, F. M., and Niftiyev, N. N., E-mail: namiq7@bk.ru. 2016. "Dielectric properties of layered FeGaInS{sub 4} single crystals in an alternating electric field". United States. doi:10.1134/S1063782616090165.
@article{osti_22649705,
title = {Dielectric properties of layered FeGaInS{sub 4} single crystals in an alternating electric field},
author = {Mammadov, F. M. and Niftiyev, N. N., E-mail: namiq7@bk.ru},
abstractNote = {The results of investigations of the frequency and temperature dependences of dielectric losses and the imaginary part of the dielectric permittivity in FeGaInS{sub 4} single crystals are presented. Their experimental values are determined. It is established that the loss tangent and the imaginary part of the permittivity of FeGaInS{sub 4} single crystals in a field with frequencies of 10{sup 4}–10{sup 6} Hz decrease inversely proportional to the frequency (tanδ ~ 1/ω), and the conductivity is characterized by the band–hopping mechanism. For FeGaInS{sub 4}, the relaxation time is calculated, and it is established that there is a mechanism of electron polarization caused by thermal motion in this crystal.},
doi = {10.1134/S1063782616090165},
journal = {Semiconductors},
number = 9,
volume = 50,
place = {United States},
year = 2016,
month = 9
}
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