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Title: Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

Abstract

The epitaxial growth of InAlN layers and GaN/AlN/InAlN heterostructures for HEMTs in growth systems with horizontal reactors of the sizes 1 × 2', 3 × 2', and 6 × 2' is investigated. Studies of the structural properties of the grown InAlN layers and electrophysical parameters of the GaN/AlN/InAlN heterostructures show that the optimal quality of epitaxial growth is attained upon a compromise between the growth conditions for InGaN and AlGaN. A comparison of the epitaxial growth in different reactors shows that optimal conditions are realized in small-scale reactors which make possible the suppression of parasitic reactions in the gas phase. In addition, the size of the reactor should be sufficient to provide highly homogeneous heterostructure parameters over area for the subsequent fabrication of devices. The optimal compositions and thicknesses of the InAlN layer for attaining the highest conductance in GaN/AlN/InAlN transistor heterostructures.

Authors:
; ; ; ; ; ; ;  [1];  [2]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
  2. CEMES–CNRS—Université de Toulouse (France)
Publication Date:
OSTI Identifier:
22649701
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 9; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; EPITAXY; FABRICATION; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; LAYERS; TRANSISTORS

Citation Formats

Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru, Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Yagovkina, M. A., Ustinov, V. M., and Cherkashin, N. A. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs. United States: N. p., 2016. Web. doi:10.1134/S1063782616090232.
Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru, Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Yagovkina, M. A., Ustinov, V. M., & Cherkashin, N. A. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs. United States. doi:10.1134/S1063782616090232.
Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru, Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Yagovkina, M. A., Ustinov, V. M., and Cherkashin, N. A. Thu . "Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs". United States. doi:10.1134/S1063782616090232.
@article{osti_22649701,
title = {Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs},
author = {Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru and Lundin, W. V. and Sakharov, A. V. and Zavarin, E. E. and Usov, S. O. and Nikolaev, A. E. and Yagovkina, M. A. and Ustinov, V. M. and Cherkashin, N. A.},
abstractNote = {The epitaxial growth of InAlN layers and GaN/AlN/InAlN heterostructures for HEMTs in growth systems with horizontal reactors of the sizes 1 × 2', 3 × 2', and 6 × 2' is investigated. Studies of the structural properties of the grown InAlN layers and electrophysical parameters of the GaN/AlN/InAlN heterostructures show that the optimal quality of epitaxial growth is attained upon a compromise between the growth conditions for InGaN and AlGaN. A comparison of the epitaxial growth in different reactors shows that optimal conditions are realized in small-scale reactors which make possible the suppression of parasitic reactions in the gas phase. In addition, the size of the reactor should be sufficient to provide highly homogeneous heterostructure parameters over area for the subsequent fabrication of devices. The optimal compositions and thicknesses of the InAlN layer for attaining the highest conductance in GaN/AlN/InAlN transistor heterostructures.},
doi = {10.1134/S1063782616090232},
journal = {Semiconductors},
number = 9,
volume = 50,
place = {United States},
year = {Thu Sep 15 00:00:00 EDT 2016},
month = {Thu Sep 15 00:00:00 EDT 2016}
}