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Title: Conditions of growth of high-quality relaxed Si{sub 1–x}Ge{sub x} layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire

Abstract

The conditions of the epitaxial growth of high-quality relaxed Si{sub 1–x}Ge{sub x} layers by the combined method of the sublimation molecular-beam epitaxy and vapor-phase decomposition of monogermane on a hot wire are considered. The combined growth procedure proposed provides a means for growing Si{sub 1–x}Ge{sub x} layers with a thickness of up to 2 µm and larger. At reduced growth temperatures (T{sub S} = 325–350°C), the procedure allows the growth of Si{sub 1–x}Ge{sub x} layers with a small surface roughness (rms ≈ 2 nm) and a low density of threading dislocations. The photoluminescence intensity of Si{sub 1–x}Ge{sub x}:Er layers is significantly (more than five times) higher than the photoluminescence intensity of layers produced under standard growth conditions (T{sub S} ≈ 500°C) and possess an external quantum efficiency estimated at a level of ~0.4%.

Authors:
; ;  [1]; ; ;  [2];  [1]; ;  [2]
  1. Nizhny Novgorod State University, Physical Technical Research Institute (Russian Federation)
  2. Nizhny Novgorod State University (Russian Federation)
Publication Date:
OSTI Identifier:
22649700
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 9; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CONCENTRATION RATIO; DECOMPOSITION; DISLOCATIONS; GERMANIUM SILICIDES; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; ROUGHNESS; SUBLIMATION; SURFACES; TEMPERATURE DEPENDENCE; VAPORS

Citation Formats

Shengurov, V. G., Chalkov, V. Yu., Denisov, S. A., Matveev, S. A., E-mail: matveevsa.sou@gmail.com, Nezhdanov, A. V., Mashin, A. I., Filatov, D. O., Stepikhova, M. V., and Krasilnik, Z. F. Conditions of growth of high-quality relaxed Si{sub 1–x}Ge{sub x} layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire. United States: N. p., 2016. Web. doi:10.1134/S1063782616090220.
Shengurov, V. G., Chalkov, V. Yu., Denisov, S. A., Matveev, S. A., E-mail: matveevsa.sou@gmail.com, Nezhdanov, A. V., Mashin, A. I., Filatov, D. O., Stepikhova, M. V., & Krasilnik, Z. F. Conditions of growth of high-quality relaxed Si{sub 1–x}Ge{sub x} layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire. United States. doi:10.1134/S1063782616090220.
Shengurov, V. G., Chalkov, V. Yu., Denisov, S. A., Matveev, S. A., E-mail: matveevsa.sou@gmail.com, Nezhdanov, A. V., Mashin, A. I., Filatov, D. O., Stepikhova, M. V., and Krasilnik, Z. F. 2016. "Conditions of growth of high-quality relaxed Si{sub 1–x}Ge{sub x} layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire". United States. doi:10.1134/S1063782616090220.
@article{osti_22649700,
title = {Conditions of growth of high-quality relaxed Si{sub 1–x}Ge{sub x} layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire},
author = {Shengurov, V. G. and Chalkov, V. Yu. and Denisov, S. A. and Matveev, S. A., E-mail: matveevsa.sou@gmail.com and Nezhdanov, A. V. and Mashin, A. I. and Filatov, D. O. and Stepikhova, M. V. and Krasilnik, Z. F.},
abstractNote = {The conditions of the epitaxial growth of high-quality relaxed Si{sub 1–x}Ge{sub x} layers by the combined method of the sublimation molecular-beam epitaxy and vapor-phase decomposition of monogermane on a hot wire are considered. The combined growth procedure proposed provides a means for growing Si{sub 1–x}Ge{sub x} layers with a thickness of up to 2 µm and larger. At reduced growth temperatures (T{sub S} = 325–350°C), the procedure allows the growth of Si{sub 1–x}Ge{sub x} layers with a small surface roughness (rms ≈ 2 nm) and a low density of threading dislocations. The photoluminescence intensity of Si{sub 1–x}Ge{sub x}:Er layers is significantly (more than five times) higher than the photoluminescence intensity of layers produced under standard growth conditions (T{sub S} ≈ 500°C) and possess an external quantum efficiency estimated at a level of ~0.4%.},
doi = {10.1134/S1063782616090220},
journal = {Semiconductors},
number = 9,
volume = 50,
place = {United States},
year = 2016,
month = 9
}
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