skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons

Abstract

Electrical properties of defects formed in n-Si(FZ) following 8 and 15 MeV proton irradiation are investigated by Hall effect measurements over the wide temperature range of T ≈ 25 to 300 K. Close attention is paid to the damaging factor of proton irradiation, leaving aside passivation effects by hydrogen. The concept of defect production and annealing processes being accepted in the literature so far needs to be reconsidered. Contrary to expectations the dominant impurity-related defects produced by MeV protons turn out to be electrically neutral in n-type material. Surprisingly, radiation acceptors appear to play a minor role. Annealing studies of irradiated samples of such complex defects as a divacancy tied to a phosphorus atom and a vacancy tied to two phosphorus atoms. The latter defect features high thermal stability. Identification of the dominant neutral donors, however, remains unclear and will require further, more detailed, studies. The electric properties of the material after proton irradiation can be completely restored at T = 800°C.

Authors:
 [1];  [2];  [3]; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
  2. Leibniz-Institute for Crystal Growth (Germany)
  3. St. Petersburg State Polytechnical University (Russian Federation)
Publication Date:
OSTI Identifier:
22649694
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 50; Journal Issue: 10; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ELECTRICAL PROPERTIES; HYDROGEN; IRRADIATION; MEV RANGE; N-TYPE CONDUCTORS; PHOSPHORUS; PHYSICAL RADIATION EFFECTS; PROTONS; SILICON; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; VACANCIES

Citation Formats

Emtsev, V. V., E-mail: emtsev@mail.ioffe.ru, Abrosimov, N. V., Kozlovskii, V. V., Oganesyan, G. A., and Poloskin, D. S. Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons. United States: N. p., 2016. Web. doi:10.1134/S1063782616100122.
Emtsev, V. V., E-mail: emtsev@mail.ioffe.ru, Abrosimov, N. V., Kozlovskii, V. V., Oganesyan, G. A., & Poloskin, D. S. Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons. United States. doi:10.1134/S1063782616100122.
Emtsev, V. V., E-mail: emtsev@mail.ioffe.ru, Abrosimov, N. V., Kozlovskii, V. V., Oganesyan, G. A., and Poloskin, D. S. Sat . "Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons". United States. doi:10.1134/S1063782616100122.
@article{osti_22649694,
title = {Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons},
author = {Emtsev, V. V., E-mail: emtsev@mail.ioffe.ru and Abrosimov, N. V. and Kozlovskii, V. V. and Oganesyan, G. A. and Poloskin, D. S.},
abstractNote = {Electrical properties of defects formed in n-Si(FZ) following 8 and 15 MeV proton irradiation are investigated by Hall effect measurements over the wide temperature range of T ≈ 25 to 300 K. Close attention is paid to the damaging factor of proton irradiation, leaving aside passivation effects by hydrogen. The concept of defect production and annealing processes being accepted in the literature so far needs to be reconsidered. Contrary to expectations the dominant impurity-related defects produced by MeV protons turn out to be electrically neutral in n-type material. Surprisingly, radiation acceptors appear to play a minor role. Annealing studies of irradiated samples of such complex defects as a divacancy tied to a phosphorus atom and a vacancy tied to two phosphorus atoms. The latter defect features high thermal stability. Identification of the dominant neutral donors, however, remains unclear and will require further, more detailed, studies. The electric properties of the material after proton irradiation can be completely restored at T = 800°C.},
doi = {10.1134/S1063782616100122},
journal = {Semiconductors},
issn = {1063-7826},
number = 10,
volume = 50,
place = {United States},
year = {2016},
month = {10}
}