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Title: Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

Abstract

We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 μm. The results obtained are promising for integration of the structures into silicon-based optoelectronics.

Authors:
; ;  [1]; ; ; ;  [2];  [1]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
  2. Lobachevsky State University of Nizhny Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22649675
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 50; Journal Issue: 11; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; LAYERS; OPACITY; OPTICAL PUMPING; QUANTUM WELLS; SILICON; STIMULATED EMISSION; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Yablonsky, A. N., E-mail: yablonsk@ipm.sci-nnov.ru, Morozov, S. V., Gaponova, D. M., Aleshkin, V. Ya., Shengurov, V. G., Zvonkov, B. N., Vikhrova, O. V., Baidus’, N. V., and Krasil’nik, Z. F. Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates. United States: N. p., 2016. Web. doi:10.1134/S1063782616110269.
Yablonsky, A. N., E-mail: yablonsk@ipm.sci-nnov.ru, Morozov, S. V., Gaponova, D. M., Aleshkin, V. Ya., Shengurov, V. G., Zvonkov, B. N., Vikhrova, O. V., Baidus’, N. V., & Krasil’nik, Z. F. Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates. United States. https://doi.org/10.1134/S1063782616110269
Yablonsky, A. N., E-mail: yablonsk@ipm.sci-nnov.ru, Morozov, S. V., Gaponova, D. M., Aleshkin, V. Ya., Shengurov, V. G., Zvonkov, B. N., Vikhrova, O. V., Baidus’, N. V., and Krasil’nik, Z. F. 2016. "Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates". United States. https://doi.org/10.1134/S1063782616110269.
@article{osti_22649675,
title = {Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates},
author = {Yablonsky, A. N., E-mail: yablonsk@ipm.sci-nnov.ru and Morozov, S. V. and Gaponova, D. M. and Aleshkin, V. Ya. and Shengurov, V. G. and Zvonkov, B. N. and Vikhrova, O. V. and Baidus’, N. V. and Krasil’nik, Z. F.},
abstractNote = {We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 μm. The results obtained are promising for integration of the structures into silicon-based optoelectronics.},
doi = {10.1134/S1063782616110269},
url = {https://www.osti.gov/biblio/22649675}, journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 50,
place = {United States},
year = {Tue Nov 15 00:00:00 EST 2016},
month = {Tue Nov 15 00:00:00 EST 2016}
}