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Title: Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

Abstract

The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10{sup 21} cm{sup –3} without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10{sup 19} cm{sup –3}) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10{sup –6} Ω cm{sup 2}) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10{sup 20} cm{sup –3} are detected.

Authors:
; ; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
Publication Date:
OSTI Identifier:
22649674
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 50; Journal Issue: 11; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; CONCENTRATION RATIO; DIFFUSION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONS; GALLIUM ARSENIDES; LAYERS; ORGANOMETALLIC COMPOUNDS; SEGREGATION; TELLURIDES; TELLURIUM; VAPOR PHASE EPITAXY

Citation Formats

Daniltsev, V. M., Demidov, E. V., Drozdov, M. N., Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru, Kraev, S. A., Surovegina, E. A., Shashkin, V. I., and Yunin, P. A. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source. United States: N. p., 2016. Web. doi:10.1134/S1063782616110075.
Daniltsev, V. M., Demidov, E. V., Drozdov, M. N., Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru, Kraev, S. A., Surovegina, E. A., Shashkin, V. I., & Yunin, P. A. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source. United States. doi:10.1134/S1063782616110075.
Daniltsev, V. M., Demidov, E. V., Drozdov, M. N., Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru, Kraev, S. A., Surovegina, E. A., Shashkin, V. I., and Yunin, P. A. Tue . "Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source". United States. doi:10.1134/S1063782616110075.
@article{osti_22649674,
title = {Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source},
author = {Daniltsev, V. M. and Demidov, E. V. and Drozdov, M. N. and Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru and Kraev, S. A. and Surovegina, E. A. and Shashkin, V. I. and Yunin, P. A.},
abstractNote = {The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10{sup 21} cm{sup –3} without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10{sup 19} cm{sup –3}) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10{sup –6} Ω cm{sup 2}) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10{sup 20} cm{sup –3} are detected.},
doi = {10.1134/S1063782616110075},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 50,
place = {United States},
year = {2016},
month = {11}
}