On the crystal structure and thermoelectric properties of thin Si{sub 1–x}Mn{sub x} films

Journal Article · Tue Nov 15 00:00:00 EST 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616110105· OSTI ID:22649672

Dorokhin, M. V.; Lesnikov, V. P.; Zdoroveishchev, A. V.; Kudrin, A. V.; Pavlov, D. A.; Usov, U. V. ^[1]

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1. Lobachevsky State University of Nizhny Novgorod, Research Institute for Physics and Technology (Russian Federation)

Thin (25 nm) Si{sub 1–x}Mn{sub x}/Si(100) films are fabricated by pulsed laser deposition. According to high-resolution transmission electron microscopy data, the films have a nanotextured crystalline structure and are chemically homogeneous. The temperature dependences of the resistivity and thermopower are measured in the range of 300–500 K, and the temperature dependences of the Seebeck coefficient and power factor are calculated.

• OSTI ID: 22649672
• Journal Information: Semiconductors, Vol. 50, Issue 11; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CONCENTRATION RATIO
CRYSTAL STRUCTURE
CRYSTALS
ENERGY BEAM DEPOSITION
LASER RADIATION
MANGANESE
POWER FACTOR
PULSED IRRADIATION
SILICON
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THERMOELECTRIC PROPERTIES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY