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Title: Magnetospectroscopy of double HgTe/CdHgTe quantum wells

Abstract

The magnetoabsorption spectra in double HgTe/CdHgTe quantum wells (QWs) with normal and inverted band structures are investigated. The Landau levels in symmetric QWs with a rectangular potential profile are calculated based on the Kane 8 × 8 model. The presence of a tunnel-transparent barrier is shown to lead to the splitting of states and “doubling” of the main magnetoabsorption lines. At a QW width close to the critical one the presence of band inversion and the emergence of a gapless band structure, similar to bilayer graphene, are shown for a structure with a single QW. The shift of magnetoabsorption lines as the carrier concentration changes due to the persistent photoconductivity effect associated with a change in the potential profile because of trap charge exchange is detected. This opens up the possibility for controlling topological phase transitions in such structures.

Authors:
; ; ; ;  [1]; ; ; ;  [2]; ; ;  [3]; ;  [4];  [1]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
  2. Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM (France)
  3. Laboratoire National des Champs Magnetiques Intenses (LNCMI-G), CNRS-UJF-UPS-INSA (France)
  4. Russian Academy of Sciences, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation)
Publication Date:
OSTI Identifier:
22649662
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 50; Journal Issue: 11; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM COMPOUNDS; CHARGE CARRIERS; CHARGE EXCHANGE; CONCENTRATION RATIO; GRAPHENE; LAYERS; MERCURY TELLURIDES; PHASE TRANSFORMATIONS; PHOTOCONDUCTIVITY; POTENTIALS; QUANTUM WELLS; TRAPS

Citation Formats

Bovkun, L. S., Krishtopenko, S. S., Ikonnikov, A. V., E-mail: antikon@ipmras.ru, Aleshkin, V. Ya., Kadykov, A. M., Ruffenach, S., Consejo, C., Teppe, F., Knap, W., Orlita, M., Piot, B., Potemski, M., Mikhailov, N. N., Dvoretskii, S. A., and Gavrilenko, V. I. Magnetospectroscopy of double HgTe/CdHgTe quantum wells. United States: N. p., 2016. Web. doi:10.1134/S1063782616110063.
Bovkun, L. S., Krishtopenko, S. S., Ikonnikov, A. V., E-mail: antikon@ipmras.ru, Aleshkin, V. Ya., Kadykov, A. M., Ruffenach, S., Consejo, C., Teppe, F., Knap, W., Orlita, M., Piot, B., Potemski, M., Mikhailov, N. N., Dvoretskii, S. A., & Gavrilenko, V. I. Magnetospectroscopy of double HgTe/CdHgTe quantum wells. United States. doi:10.1134/S1063782616110063.
Bovkun, L. S., Krishtopenko, S. S., Ikonnikov, A. V., E-mail: antikon@ipmras.ru, Aleshkin, V. Ya., Kadykov, A. M., Ruffenach, S., Consejo, C., Teppe, F., Knap, W., Orlita, M., Piot, B., Potemski, M., Mikhailov, N. N., Dvoretskii, S. A., and Gavrilenko, V. I. Tue . "Magnetospectroscopy of double HgTe/CdHgTe quantum wells". United States. doi:10.1134/S1063782616110063.
@article{osti_22649662,
title = {Magnetospectroscopy of double HgTe/CdHgTe quantum wells},
author = {Bovkun, L. S. and Krishtopenko, S. S. and Ikonnikov, A. V., E-mail: antikon@ipmras.ru and Aleshkin, V. Ya. and Kadykov, A. M. and Ruffenach, S. and Consejo, C. and Teppe, F. and Knap, W. and Orlita, M. and Piot, B. and Potemski, M. and Mikhailov, N. N. and Dvoretskii, S. A. and Gavrilenko, V. I.},
abstractNote = {The magnetoabsorption spectra in double HgTe/CdHgTe quantum wells (QWs) with normal and inverted band structures are investigated. The Landau levels in symmetric QWs with a rectangular potential profile are calculated based on the Kane 8 × 8 model. The presence of a tunnel-transparent barrier is shown to lead to the splitting of states and “doubling” of the main magnetoabsorption lines. At a QW width close to the critical one the presence of band inversion and the emergence of a gapless band structure, similar to bilayer graphene, are shown for a structure with a single QW. The shift of magnetoabsorption lines as the carrier concentration changes due to the persistent photoconductivity effect associated with a change in the potential profile because of trap charge exchange is detected. This opens up the possibility for controlling topological phase transitions in such structures.},
doi = {10.1134/S1063782616110063},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 50,
place = {United States},
year = {2016},
month = {11}
}