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Title: Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields

Abstract

The low-temperature magnetoresistive effect in the semiconductor HgSe:Fe in weak magnetic fields at microwave frequencies is examined. The negative and positive components of magnetoabsorption based on the magnetoresistive effect in the degenerate conduction band are analyzed. The special features of experiments carried out in the investigated frequency range are noted. The momentum and electron-energy relaxation times are determined from the experimental field and temperature dependences.

Authors:
; ;  [1];  [2]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
  2. Russian Academy of Sciences, Ural Branch, Mikheev Institute of Metal Physics (Russian Federation)
Publication Date:
OSTI Identifier:
22649655
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 2; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ELECTRONS; FREQUENCY DEPENDENCE; IRON COMPOUNDS; MAGNETIC FIELDS; MAGNETORESISTANCE; MERCURY SELENIDES; MICROWAVE RADIATION; RELAXATION; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE

Citation Formats

Veinger, A. I., E-mail: Anatoly.Veinger@mail.ioffe.ru, Tisnek, T. V., Kochman, I. V., and Okulov, V. I. Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields. United States: N. p., 2017. Web. doi:10.1134/S1063782617020233.
Veinger, A. I., E-mail: Anatoly.Veinger@mail.ioffe.ru, Tisnek, T. V., Kochman, I. V., & Okulov, V. I. Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields. United States. doi:10.1134/S1063782617020233.
Veinger, A. I., E-mail: Anatoly.Veinger@mail.ioffe.ru, Tisnek, T. V., Kochman, I. V., and Okulov, V. I. Wed . "Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields". United States. doi:10.1134/S1063782617020233.
@article{osti_22649655,
title = {Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields},
author = {Veinger, A. I., E-mail: Anatoly.Veinger@mail.ioffe.ru and Tisnek, T. V. and Kochman, I. V. and Okulov, V. I.},
abstractNote = {The low-temperature magnetoresistive effect in the semiconductor HgSe:Fe in weak magnetic fields at microwave frequencies is examined. The negative and positive components of magnetoabsorption based on the magnetoresistive effect in the degenerate conduction band are analyzed. The special features of experiments carried out in the investigated frequency range are noted. The momentum and electron-energy relaxation times are determined from the experimental field and temperature dependences.},
doi = {10.1134/S1063782617020233},
journal = {Semiconductors},
number = 2,
volume = 51,
place = {United States},
year = {Wed Feb 15 00:00:00 EST 2017},
month = {Wed Feb 15 00:00:00 EST 2017}
}