Influence of the doping type and level on the morphology of porous Si formed by galvanic etching

Journal Article · Wed Feb 15 00:00:00 EST 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617020178· OSTI ID:22649654

Gavrilov, S. A.; Shilyaeva, Yu. I. ^[1]; Pavlov, A. A. ^[2]; Shaman, Yu. P. ^[3]; Dudin, A. A. ^[2]

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1. Zelenograd, National Research University of Electronic Technology (MIET) (Russian Federation)
2. Russian Academy of Sciences, Institute of Nanotechnology of Microelectronics (Russian Federation)
3. Zelenograd, Scientific-Manufacturing Complex “Technological Centre” MIET (Russian Federation)

The formation of porous silicon (por-Si) layers by the galvanic etching of single-crystal Si samples (doped with boron or phosphorus) in an HF/C{sub 2}H{sub 5}OH/H{sub 2}O{sub 2} solution is investigated. The por-Si layers are analyzed by the capillary condensation of nitrogen and scanning electron microscopy (SEM). The dependences of the morphological characteristics of por-Si (pore diameter, specific surface area, pore volume, and thickness of the pore walls), which determine the por-Si combustion kinetics, on the dopant type and initial wafer resistivity are established.

• OSTI ID: 22649654
• Journal Information: Semiconductors, Vol. 51, Issue 2; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
COMBUSTION KINETICS
DOPED MATERIALS
ETCHING
HYDROFLUORIC ACID
HYDROGEN PEROXIDE
LAYERS
MONOCRYSTALS
MORPHOLOGY
PHOSPHORUS
POROUS MATERIALS
SCANNING ELECTRON MICROSCOPY
SILICON
SPECIFIC SURFACE AREA