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Title: Study of silicon doped with zinc ions and annealed in oxygen

Abstract

The results of studies of the surface layer of silicon and the formation of precipitates in Czochralski n-Si (100) samples implanted with {sup 64}Zn{sup +} ions with an energy of 50 keV and a dose of 5 × 10{sup 16} cm{sup –2} at room temperature and then oxidized at temperatures from 400 to 900°C are reported. The surface is visualized using an electron microscope, while visualization of the surface layer is conducted via profiling in depth by elemental mapping using Auger electron spectroscopy. The distribution of impurity ions in silicon is analyzed using a time-of-flight secondary-ion mass spectrometer. Using X-ray photoelectron spectroscopy, the chemical state of atoms of the silicon matrix and zinc and oxygen impurity atoms is studied, and the phase composition of the implanted and annealed samples is refined. After the implantation of zinc, two maxima of the zinc concentration, one at the wafer surface and the other at a depth of 70 nm, are observed. In this case, nanoparticles of the Zn metal phase and ZnO phase, about 10 nm in dimensions, are formed at the surface and in the surface layer. After annealing in oxygen, the ZnO · Zn{sub 2}SiO{sub 4} and Zn · ZnO phasesmore » are detected near the surface and at a depth of 50 nm, respectively.« less

Authors:
 [1]; ;  [2];  [3]
  1. Russian Academy of Sciences, Institute of Physics and Technology (Russian Federation)
  2. Zelenograd, National Research University of Electronic Technology “MIET” (Russian Federation)
  3. National Research University “MEI” (Russian Federation)
Publication Date:
OSTI Identifier:
22649653
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 2; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHEMICAL STATE; CONCENTRATION RATIO; DOPED MATERIALS; LAYERS; MATRIX MATERIALS; NANOPARTICLES; N-TYPE CONDUCTORS; OXYGEN; SILICON; SURFACES; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC 64; ZINC IONS; ZINC OXIDES; ZINC SILICATES

Citation Formats

Privezentsev, V. V., E-mail: v.privezentsev@mail.ru, Kirilenko, E. P., Goryachev, A. N., and Batrakov, A. A.. Study of silicon doped with zinc ions and annealed in oxygen. United States: N. p., 2017. Web. doi:10.1134/S1063782617020154.
Privezentsev, V. V., E-mail: v.privezentsev@mail.ru, Kirilenko, E. P., Goryachev, A. N., & Batrakov, A. A.. Study of silicon doped with zinc ions and annealed in oxygen. United States. doi:10.1134/S1063782617020154.
Privezentsev, V. V., E-mail: v.privezentsev@mail.ru, Kirilenko, E. P., Goryachev, A. N., and Batrakov, A. A.. Wed . "Study of silicon doped with zinc ions and annealed in oxygen". United States. doi:10.1134/S1063782617020154.
@article{osti_22649653,
title = {Study of silicon doped with zinc ions and annealed in oxygen},
author = {Privezentsev, V. V., E-mail: v.privezentsev@mail.ru and Kirilenko, E. P. and Goryachev, A. N. and Batrakov, A. A.},
abstractNote = {The results of studies of the surface layer of silicon and the formation of precipitates in Czochralski n-Si (100) samples implanted with {sup 64}Zn{sup +} ions with an energy of 50 keV and a dose of 5 × 10{sup 16} cm{sup –2} at room temperature and then oxidized at temperatures from 400 to 900°C are reported. The surface is visualized using an electron microscope, while visualization of the surface layer is conducted via profiling in depth by elemental mapping using Auger electron spectroscopy. The distribution of impurity ions in silicon is analyzed using a time-of-flight secondary-ion mass spectrometer. Using X-ray photoelectron spectroscopy, the chemical state of atoms of the silicon matrix and zinc and oxygen impurity atoms is studied, and the phase composition of the implanted and annealed samples is refined. After the implantation of zinc, two maxima of the zinc concentration, one at the wafer surface and the other at a depth of 70 nm, are observed. In this case, nanoparticles of the Zn metal phase and ZnO phase, about 10 nm in dimensions, are formed at the surface and in the surface layer. After annealing in oxygen, the ZnO · Zn{sub 2}SiO{sub 4} and Zn · ZnO phases are detected near the surface and at a depth of 50 nm, respectively.},
doi = {10.1134/S1063782617020154},
journal = {Semiconductors},
number = 2,
volume = 51,
place = {United States},
year = {Wed Feb 15 00:00:00 EST 2017},
month = {Wed Feb 15 00:00:00 EST 2017}
}
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  • This paper investigates single crystals of ZnS annealed in oxygen with enhanced partial pressure of atomic oxygen over the thermodynamic equilibrium pressure; this should promote more intensive occurence of oxidative processes. The pressure of atomic oxygen was increased by effecting dissociation of oxygen molecules in a high-frequency discharge. The results of measurement of the electrical and photelectrical properties of ZnS crystals treated in atomic oxygen coincide with the results of analogous measurements of the properties of ZnS crystals treated in active sulfur vapor. This yields evidence of the identity of the prevailing defects in these crystals. The main mechanism ofmore » defect formation in annealing of ZnS in oxygen is quasiepitaxial.« less
  • An isotope tracer study, i.e., {sup 18}O/{sup 16}O exchange using {sup 18}O{sub 2} and H{sub 2}{sup 18}O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium–gallium–zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200 °C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for {sup 18}O{sub 2} than for H{sub 2}{sup 18}O. PDA in a humid atmosphere at 400 °C further suppressed the reactivity of O{sub 2} at the a-IGZO film surface,more » which is attributable to –OH-terminated surface formation.« less