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Title: New mechanism of semiconductor polarization at the interface with an organic insulator

Abstract

A semiconductor—organic-insulator system with spatially distributed charge is created with a uniquely low density of fast surface states (N{sub ss}) at the interface. A system with N{sub ss} ≈ 5 × 10{sup 10} cm{sup –2} is obtained for the example of n-Ge and the physical characteristics of the interface are measured for this system with liquid and metal field electrodes. For a system with an organic insulator, the range of variation of the surface potential from enrichment of the space-charge region of the semiconductor to the inversion state is first obtained without changing the mechanism of interaction between the adsorbed layer and the semiconductor surface. The effect of enhanced polarization of the space-charge region of the semiconductor occurs due to a change in the spatial structure of mobile charge in the organic dielectric layer. The system developed in the study opens up technological opportunities for the formation of a new generation of electronic devices based on organic film structures and for experimental modeling of the electronic properties of biological membranes.

Authors:
; ; ;  [1];  [2]
  1. St. Petersburg State University (Russian Federation)
  2. Interdisciplinary Resource Center for Nanotechnology at St. Petersburg University (Russian Federation)
Publication Date:
OSTI Identifier:
22649650
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 2; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIELECTRIC MATERIALS; INTERFACES; LAYERS; MEMBRANES; ORGANIC INSULATORS; POLARIZATION; SEMICONDUCTOR MATERIALS; SPACE CHARGE; SURFACE POTENTIAL; SURFACES; THIN FILMS

Citation Formats

Yafyasov, A. M., E-mail: yafyasov@gmail.com, Bogevolnov, V. B., Ryumtsev, E. I., Kovshik, A. P., and Mikhailovski, V. Yu. New mechanism of semiconductor polarization at the interface with an organic insulator. United States: N. p., 2017. Web. doi:10.1134/S1063782617020245.
Yafyasov, A. M., E-mail: yafyasov@gmail.com, Bogevolnov, V. B., Ryumtsev, E. I., Kovshik, A. P., & Mikhailovski, V. Yu. New mechanism of semiconductor polarization at the interface with an organic insulator. United States. doi:10.1134/S1063782617020245.
Yafyasov, A. M., E-mail: yafyasov@gmail.com, Bogevolnov, V. B., Ryumtsev, E. I., Kovshik, A. P., and Mikhailovski, V. Yu. Wed . "New mechanism of semiconductor polarization at the interface with an organic insulator". United States. doi:10.1134/S1063782617020245.
@article{osti_22649650,
title = {New mechanism of semiconductor polarization at the interface with an organic insulator},
author = {Yafyasov, A. M., E-mail: yafyasov@gmail.com and Bogevolnov, V. B. and Ryumtsev, E. I. and Kovshik, A. P. and Mikhailovski, V. Yu.},
abstractNote = {A semiconductor—organic-insulator system with spatially distributed charge is created with a uniquely low density of fast surface states (N{sub ss}) at the interface. A system with N{sub ss} ≈ 5 × 10{sup 10} cm{sup –2} is obtained for the example of n-Ge and the physical characteristics of the interface are measured for this system with liquid and metal field electrodes. For a system with an organic insulator, the range of variation of the surface potential from enrichment of the space-charge region of the semiconductor to the inversion state is first obtained without changing the mechanism of interaction between the adsorbed layer and the semiconductor surface. The effect of enhanced polarization of the space-charge region of the semiconductor occurs due to a change in the spatial structure of mobile charge in the organic dielectric layer. The system developed in the study opens up technological opportunities for the formation of a new generation of electronic devices based on organic film structures and for experimental modeling of the electronic properties of biological membranes.},
doi = {10.1134/S1063782617020245},
journal = {Semiconductors},
number = 2,
volume = 51,
place = {United States},
year = {Wed Feb 15 00:00:00 EST 2017},
month = {Wed Feb 15 00:00:00 EST 2017}
}