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Title: Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

Abstract

The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critical terrace size D{sub crit}, at which a two-dimensional island is nucleated in the center, is measured in the temperature range 900–1180°C at different silicon fluxes onto the surface. It is found that the parameter D{sub crit}{sup 2} is a power function of the frequency of island nucleation, with the exponent χ = 0.9 ± 0.05 in the entire temperature range under study. It is established that the kinetics of nucleus formation is defined by the diffusion of adsorbed silicon atoms at temperatures of up to 1180°C and the minimum critical nucleus size corresponds to 12 silicon atoms.

Authors:
; ;  [1]
  1. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22649648
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 2; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIFFUSION; ELECTRON MICROSCOPY; EPITAXY; FREQUENCY DEPENDENCE; NUCLEATION; PRESSURE RANGE NANO PA; REFLECTION; SILICON; SURFACES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K; TWO-DIMENSIONAL SYSTEMS

Citation Formats

Sitnikov, S. V., E-mail: sitnikov@isp.nsc.ru, Kosolobov, S. S., and Latyshev, A. V. Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth. United States: N. p., 2017. Web. doi:10.1134/S106378261702021X.
Sitnikov, S. V., E-mail: sitnikov@isp.nsc.ru, Kosolobov, S. S., & Latyshev, A. V. Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth. United States. doi:10.1134/S106378261702021X.
Sitnikov, S. V., E-mail: sitnikov@isp.nsc.ru, Kosolobov, S. S., and Latyshev, A. V. Wed . "Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth". United States. doi:10.1134/S106378261702021X.
@article{osti_22649648,
title = {Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth},
author = {Sitnikov, S. V., E-mail: sitnikov@isp.nsc.ru and Kosolobov, S. S. and Latyshev, A. V.},
abstractNote = {The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critical terrace size D{sub crit}, at which a two-dimensional island is nucleated in the center, is measured in the temperature range 900–1180°C at different silicon fluxes onto the surface. It is found that the parameter D{sub crit}{sup 2} is a power function of the frequency of island nucleation, with the exponent χ = 0.9 ± 0.05 in the entire temperature range under study. It is established that the kinetics of nucleus formation is defined by the diffusion of adsorbed silicon atoms at temperatures of up to 1180°C and the minimum critical nucleus size corresponds to 12 silicon atoms.},
doi = {10.1134/S106378261702021X},
journal = {Semiconductors},
number = 2,
volume = 51,
place = {United States},
year = {Wed Feb 15 00:00:00 EST 2017},
month = {Wed Feb 15 00:00:00 EST 2017}
}