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Title: On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

Abstract

The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence excitation modes. A comparison of the results obtained during photo- and electroluminescence shows an additional (to the loss associated with Auger recombination) low-temperature loss in the high-density current region. This causes inversion of the temperature dependence of the quantum efficiency at temperatures lower than 220–300 K. Analysis shows that the loss is associated with electron leakage from the light-emitting-diode active region. The experimental data are explained using the ballistic-overflow model. The simulation results are in qualitative agreement with the experimental dependences of the quantum efficiency on temperature and current density.

Authors:
; ; ;  [1]
  1. National Research Tomsk State University (Russian Federation)
Publication Date:
OSTI Identifier:
22649644
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 2; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPUTERIZED SIMULATION; CURRENT DENSITY; ELECTROLUMINESCENCE; ELECTRONS; EXCITATION; GALLIUM NITRIDES; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; QUANTUM EFFICIENCY; QUANTUM WELLS; RECOMBINATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K

Citation Formats

Prudaev, I. A., E-mail: funcelab@gmail.com, Kopyev, V. V., Romanov, I. S., and Oleynik, V. L.. On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes. United States: N. p., 2017. Web. doi:10.1134/S1063782617020166.
Prudaev, I. A., E-mail: funcelab@gmail.com, Kopyev, V. V., Romanov, I. S., & Oleynik, V. L.. On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes. United States. doi:10.1134/S1063782617020166.
Prudaev, I. A., E-mail: funcelab@gmail.com, Kopyev, V. V., Romanov, I. S., and Oleynik, V. L.. Wed . "On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes". United States. doi:10.1134/S1063782617020166.
@article{osti_22649644,
title = {On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes},
author = {Prudaev, I. A., E-mail: funcelab@gmail.com and Kopyev, V. V. and Romanov, I. S. and Oleynik, V. L.},
abstractNote = {The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence excitation modes. A comparison of the results obtained during photo- and electroluminescence shows an additional (to the loss associated with Auger recombination) low-temperature loss in the high-density current region. This causes inversion of the temperature dependence of the quantum efficiency at temperatures lower than 220–300 K. Analysis shows that the loss is associated with electron leakage from the light-emitting-diode active region. The experimental data are explained using the ballistic-overflow model. The simulation results are in qualitative agreement with the experimental dependences of the quantum efficiency on temperature and current density.},
doi = {10.1134/S1063782617020166},
journal = {Semiconductors},
number = 2,
volume = 51,
place = {United States},
year = {Wed Feb 15 00:00:00 EST 2017},
month = {Wed Feb 15 00:00:00 EST 2017}
}