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Title: Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K

Abstract

The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2–300 K. At low temperatures (T = 4.2–100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 μm. The emission becomes spontaneous at T > 70 K due to the resonant “switch-on” of the CHHS Auger recombination process in which the energy of a recombining electron–hole pair is transferred to a hole, with hole transition to the spin–orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers.

Authors:
; ; ;  [1]; ; ; ;  [2];  [1]; ;  [3]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
  2. Microsensor Technology (Russian Federation)
  3. ITMO University (Russian Federation)
Publication Date:
OSTI Identifier:
22649643
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 2; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTROLUMINESCENCE; ELECTRONS; HETEROJUNCTIONS; HOLES; INDIUM ANTIMONIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LASER MATERIALS; RECOMBINATION; STIMULATED EMISSION; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Mynbaev, K. D., E-mail: mynkad@mail.ioffe.ru, Bazhenov, N. L., Semakova, A. A., Mikhailova, M. P., Stoyanov, N. D., Kizhaev, S. S., Molchanov, S. S., Astakhova, A. P., Chernyaev, A. V., Lipsanen, H., and Bougrov, V. E.. Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K. United States: N. p., 2017. Web. doi:10.1134/S1063782617020117.
Mynbaev, K. D., E-mail: mynkad@mail.ioffe.ru, Bazhenov, N. L., Semakova, A. A., Mikhailova, M. P., Stoyanov, N. D., Kizhaev, S. S., Molchanov, S. S., Astakhova, A. P., Chernyaev, A. V., Lipsanen, H., & Bougrov, V. E.. Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K. United States. doi:10.1134/S1063782617020117.
Mynbaev, K. D., E-mail: mynkad@mail.ioffe.ru, Bazhenov, N. L., Semakova, A. A., Mikhailova, M. P., Stoyanov, N. D., Kizhaev, S. S., Molchanov, S. S., Astakhova, A. P., Chernyaev, A. V., Lipsanen, H., and Bougrov, V. E.. Wed . "Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K". United States. doi:10.1134/S1063782617020117.
@article{osti_22649643,
title = {Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K},
author = {Mynbaev, K. D., E-mail: mynkad@mail.ioffe.ru and Bazhenov, N. L. and Semakova, A. A. and Mikhailova, M. P. and Stoyanov, N. D. and Kizhaev, S. S. and Molchanov, S. S. and Astakhova, A. P. and Chernyaev, A. V. and Lipsanen, H. and Bougrov, V. E.},
abstractNote = {The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2–300 K. At low temperatures (T = 4.2–100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 μm. The emission becomes spontaneous at T > 70 K due to the resonant “switch-on” of the CHHS Auger recombination process in which the energy of a recombining electron–hole pair is transferred to a hole, with hole transition to the spin–orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers.},
doi = {10.1134/S1063782617020117},
journal = {Semiconductors},
number = 2,
volume = 51,
place = {United States},
year = {Wed Feb 15 00:00:00 EST 2017},
month = {Wed Feb 15 00:00:00 EST 2017}
}