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Title: Spin-dependent tunneling recombination in heterostructures with a magnetic layer

Abstract

We propose a mechanism for the generation of spin polarization in semiconductor heterostructures with a quantum well and a magnetic impurity layer spatially separated from it. The spin polarization of carriers in a quantum well originates from spin-dependent tunneling recombination at impurity states in the magnetic layer, which is accompanied by a fast linear increase in the degree of circular polarization of photoluminescence from the quantum well. Two situations are theoretically considered. In the first case, resonant tunneling to the spin-split sublevels of the impurity center occurs and spin polarization is caused by different populations of resonance levels in the quantum well for opposite spin projections. In the second, nonresonant case, the spin-split impurity level lies above the occupied states of electrons in the quantum well and plays the role of an intermediate state in the two-stage coherent spin-dependent recombination of an electron from the quantum well and a hole in the impurity layer. The developed theory allows us to explain both qualitatively and quantitatively the kinetics of photoexcited electrons in experiments with photoluminescence with time resolution in Mn-doped InGaAs heterostructures.

Authors:
; ;  [1];  [2]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
  2. Lappeenranta University of Technology (Finland)
Publication Date:
OSTI Identifier:
22649630
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 1; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOPED MATERIALS; ELECTRONS; GALLIUM ARSENIDES; HOLES; INDIUM ARSENIDES; INTERMEDIATE STATE; LAYERS; PHOTOLUMINESCENCE; POLARIZATION; QUANTUM WELLS; RECOMBINATION; SEMICONDUCTOR MATERIALS; SPIN; SPIN ORIENTATION; TIME RESOLUTION; TUNNEL EFFECT

Citation Formats

Denisov, K. S., E-mail: denisokonstantin@gmail.com, Rozhansky, I. V., Averkiev, N. S., and Lähderanta, E. Spin-dependent tunneling recombination in heterostructures with a magnetic layer. United States: N. p., 2017. Web. doi:10.1134/S1063782617010067.
Denisov, K. S., E-mail: denisokonstantin@gmail.com, Rozhansky, I. V., Averkiev, N. S., & Lähderanta, E. Spin-dependent tunneling recombination in heterostructures with a magnetic layer. United States. doi:10.1134/S1063782617010067.
Denisov, K. S., E-mail: denisokonstantin@gmail.com, Rozhansky, I. V., Averkiev, N. S., and Lähderanta, E. Sun . "Spin-dependent tunneling recombination in heterostructures with a magnetic layer". United States. doi:10.1134/S1063782617010067.
@article{osti_22649630,
title = {Spin-dependent tunneling recombination in heterostructures with a magnetic layer},
author = {Denisov, K. S., E-mail: denisokonstantin@gmail.com and Rozhansky, I. V. and Averkiev, N. S. and Lähderanta, E.},
abstractNote = {We propose a mechanism for the generation of spin polarization in semiconductor heterostructures with a quantum well and a magnetic impurity layer spatially separated from it. The spin polarization of carriers in a quantum well originates from spin-dependent tunneling recombination at impurity states in the magnetic layer, which is accompanied by a fast linear increase in the degree of circular polarization of photoluminescence from the quantum well. Two situations are theoretically considered. In the first case, resonant tunneling to the spin-split sublevels of the impurity center occurs and spin polarization is caused by different populations of resonance levels in the quantum well for opposite spin projections. In the second, nonresonant case, the spin-split impurity level lies above the occupied states of electrons in the quantum well and plays the role of an intermediate state in the two-stage coherent spin-dependent recombination of an electron from the quantum well and a hole in the impurity layer. The developed theory allows us to explain both qualitatively and quantitatively the kinetics of photoexcited electrons in experiments with photoluminescence with time resolution in Mn-doped InGaAs heterostructures.},
doi = {10.1134/S1063782617010067},
journal = {Semiconductors},
number = 1,
volume = 51,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2017},
month = {Sun Jan 15 00:00:00 EST 2017}
}