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Title: Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate

Abstract

The radiative properties of InGaAs/GaAs/InGaP laser structures with radiation output through the substrate depending on the number of quantum wells in the active region and laser diodes on their basis are investigated. It is established that the presence of six–eight quantum wells in the active region is optimum from the viewpoint of observable values of the threshold current and the output optical power of lasers.

Authors:
; ; ; ;  [1]; ;  [2]
  1. Nizhny Novgorod State University, Physicotechnical Research Institute (Russian Federation)
  2. Belarussian State University (Belarus)
Publication Date:
OSTI Identifier:
22649626
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 1; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; LASER RADIATION; LASERS; QUANTUM WELLS; SUBSTRATES; THRESHOLD CURRENT

Citation Formats

Nekorkin, S. M., Zvonkov, B. N., Baidus, N. V., Dikareva, N. V., E-mail: dnat@ro.ru, Vikhrova, O. V., Afonenko, A. A., and Ushakov, D. V. Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate. United States: N. p., 2017. Web. doi:10.1134/S1063782617010158.
Nekorkin, S. M., Zvonkov, B. N., Baidus, N. V., Dikareva, N. V., E-mail: dnat@ro.ru, Vikhrova, O. V., Afonenko, A. A., & Ushakov, D. V. Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate. United States. doi:10.1134/S1063782617010158.
Nekorkin, S. M., Zvonkov, B. N., Baidus, N. V., Dikareva, N. V., E-mail: dnat@ro.ru, Vikhrova, O. V., Afonenko, A. A., and Ushakov, D. V. Sun . "Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate". United States. doi:10.1134/S1063782617010158.
@article{osti_22649626,
title = {Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate},
author = {Nekorkin, S. M. and Zvonkov, B. N. and Baidus, N. V. and Dikareva, N. V., E-mail: dnat@ro.ru and Vikhrova, O. V. and Afonenko, A. A. and Ushakov, D. V.},
abstractNote = {The radiative properties of InGaAs/GaAs/InGaP laser structures with radiation output through the substrate depending on the number of quantum wells in the active region and laser diodes on their basis are investigated. It is established that the presence of six–eight quantum wells in the active region is optimum from the viewpoint of observable values of the threshold current and the output optical power of lasers.},
doi = {10.1134/S1063782617010158},
journal = {Semiconductors},
number = 1,
volume = 51,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2017},
month = {Sun Jan 15 00:00:00 EST 2017}
}
  • Leakage of electrons out of the active region of InGaAsP/InP laser heterostructures at different temperatures was measured by a purely electrical method. Comparison of the obtained results with the results of modeling indicates that special attention should be paid to the acceptor doping levels in the p cladding layer immediately adjacent the active region. Lower acceptor concentration may lead to unacceptably high thermionic leakage.
  • Processes of active-region formation for green LEDs on the basis of multilayer strained InGaN/GaN nanoheterostructures have been studied. It is shown that the formation of structures of this kind is highly affected by elastic stress relaxation leading to a larger amount of indium incorporated into InGaN layers. For structures emitting in the blue spectral range, an increase in the number of quantum wells (QWs) from 1 to 10 does not lead to stress relaxation or to a shift of the emission wavelength, whereas for structures emitting in the green spectral range, raising the number of QWs from one to fivemore » causes a monotonic increase in the emission wavelength.« less
  • The effect of the active region thickness on the basic characteristics of high-power semiconductor lasers based on AlGaAs/GaAs/InGaAs asymmetric separate-confinement heterostructures grown by MOCVD epitaxy has been studied. It is shown that the threshold current, temperature sensitivity of the threshold current density, internal quantum efficiency of stimulated emission, and differential quantum efficiency are improved as the active region thickness increases. It is demonstrated that the maximum attainable optical emission power of a semiconductor laser and the internal quantum efficiency of photoluminescence are the most sensitive to defect formation in the heterostructure and become lower as the critical thickness of themore » strained In{sub x}Ga{sub 1-x} As layer in the active region is exceeded.« less
  • The design features of light-emitting-diode heterostructures with a monolithic InGaN/GaN active region containing several InGaN quantum wells (QWs) emitting at different wavelengths, grown by metal-organic chemical vapor deposition, are studied. It is shown that the number of emission bands can be raised to three by increasing the number of deposited InGaN QWs with different indium contents. The emission efficiency decreases by approximately 30% with increasing number of QWs at high currents. The dependences of the optical properties of the heterostructures on the number of QWs and types of barriers between the QWs (GaN layer or InGaN/GaN short-period superlattice) are analyzed.more » It is demonstrated that the ratio between the intensities of the emission lines widely varies with current flowing through the structure and greatly depends on the type and width of the barriers between the QWs.« less
  • Semiconductor lasers with a narrow (∼2°) directional pattern in the planes both parallel and perpendicular to the p–n junction are fabricated. To achieve a low radiation divergence in the p–n junction plane, the active region in this plane was designed in the form of a trapezium. The narrow directional pattern in the plane perpendicular to the p–n junction was ensured by the use of a leaky mode, through which more than 90% of laser power was coupled out. (lasers)