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Title: InGaN/GaN light-emitting diode microwires of submillimeter length

Abstract

Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell structures 400–600 μm in length are grown by metal–organic vapor-phase epitaxy on sapphire and silicon substrates. The technology of the titanium-nanolayer-induced ultrafast growth of nanowire and microwire crystals is used. As a current is passed through the microcrystals, an electroluminescence signal is observed in the blue–green spectral region.

Authors:
; ; ;  [1];  [2]; ;  [1];  [2]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
  2. Russian Academy of Sciences, Research and Engineering Center of Submicron Heterostructures for Microelectronics (Russian Federation)
Publication Date:
OSTI Identifier:
22649623
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 1; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALS; ELECTROLUMINESCENCE; GALLIUM NITRIDES; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; NANOWIRES; ORGANOMETALLIC COMPOUNDS; SAPPHIRE; SILICON; SUBSTRATES; TITANIUM; VAPOR PHASE EPITAXY

Citation Formats

Lundin, W. V., E-mail: lundin.vpegroup@mail.ioffe.ru, Rodin, S. N., Sakharov, A. V., Lundina, E. Yu., Usov, S. O., Zadiranov, Yu. M., Troshkov, S. I., and Tsatsulnikov, A. F. InGaN/GaN light-emitting diode microwires of submillimeter length. United States: N. p., 2017. Web. doi:10.1134/S1063782617010122.
Lundin, W. V., E-mail: lundin.vpegroup@mail.ioffe.ru, Rodin, S. N., Sakharov, A. V., Lundina, E. Yu., Usov, S. O., Zadiranov, Yu. M., Troshkov, S. I., & Tsatsulnikov, A. F. InGaN/GaN light-emitting diode microwires of submillimeter length. United States. doi:10.1134/S1063782617010122.
Lundin, W. V., E-mail: lundin.vpegroup@mail.ioffe.ru, Rodin, S. N., Sakharov, A. V., Lundina, E. Yu., Usov, S. O., Zadiranov, Yu. M., Troshkov, S. I., and Tsatsulnikov, A. F. Sun . "InGaN/GaN light-emitting diode microwires of submillimeter length". United States. doi:10.1134/S1063782617010122.
@article{osti_22649623,
title = {InGaN/GaN light-emitting diode microwires of submillimeter length},
author = {Lundin, W. V., E-mail: lundin.vpegroup@mail.ioffe.ru and Rodin, S. N. and Sakharov, A. V. and Lundina, E. Yu. and Usov, S. O. and Zadiranov, Yu. M. and Troshkov, S. I. and Tsatsulnikov, A. F.},
abstractNote = {Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell structures 400–600 μm in length are grown by metal–organic vapor-phase epitaxy on sapphire and silicon substrates. The technology of the titanium-nanolayer-induced ultrafast growth of nanowire and microwire crystals is used. As a current is passed through the microcrystals, an electroluminescence signal is observed in the blue–green spectral region.},
doi = {10.1134/S1063782617010122},
journal = {Semiconductors},
number = 1,
volume = 51,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2017},
month = {Sun Jan 15 00:00:00 EST 2017}
}