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Title: InGaN/GaN light-emitting diode microwires of submillimeter length

Abstract

Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell structures 400–600 μm in length are grown by metal–organic vapor-phase epitaxy on sapphire and silicon substrates. The technology of the titanium-nanolayer-induced ultrafast growth of nanowire and microwire crystals is used. As a current is passed through the microcrystals, an electroluminescence signal is observed in the blue–green spectral region.

Authors:
; ; ;  [1];  [2]; ;  [1];  [2]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
  2. Russian Academy of Sciences, Research and Engineering Center of Submicron Heterostructures for Microelectronics (Russian Federation)
Publication Date:
OSTI Identifier:
22649623
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 1; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALS; ELECTROLUMINESCENCE; GALLIUM NITRIDES; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; NANOWIRES; ORGANOMETALLIC COMPOUNDS; SAPPHIRE; SILICON; SUBSTRATES; TITANIUM; VAPOR PHASE EPITAXY

Citation Formats

Lundin, W. V., E-mail: lundin.vpegroup@mail.ioffe.ru, Rodin, S. N., Sakharov, A. V., Lundina, E. Yu., Usov, S. O., Zadiranov, Yu. M., Troshkov, S. I., and Tsatsulnikov, A. F. InGaN/GaN light-emitting diode microwires of submillimeter length. United States: N. p., 2017. Web. doi:10.1134/S1063782617010122.
Lundin, W. V., E-mail: lundin.vpegroup@mail.ioffe.ru, Rodin, S. N., Sakharov, A. V., Lundina, E. Yu., Usov, S. O., Zadiranov, Yu. M., Troshkov, S. I., & Tsatsulnikov, A. F. InGaN/GaN light-emitting diode microwires of submillimeter length. United States. doi:10.1134/S1063782617010122.
Lundin, W. V., E-mail: lundin.vpegroup@mail.ioffe.ru, Rodin, S. N., Sakharov, A. V., Lundina, E. Yu., Usov, S. O., Zadiranov, Yu. M., Troshkov, S. I., and Tsatsulnikov, A. F. Sun . "InGaN/GaN light-emitting diode microwires of submillimeter length". United States. doi:10.1134/S1063782617010122.
@article{osti_22649623,
title = {InGaN/GaN light-emitting diode microwires of submillimeter length},
author = {Lundin, W. V., E-mail: lundin.vpegroup@mail.ioffe.ru and Rodin, S. N. and Sakharov, A. V. and Lundina, E. Yu. and Usov, S. O. and Zadiranov, Yu. M. and Troshkov, S. I. and Tsatsulnikov, A. F.},
abstractNote = {Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell structures 400–600 μm in length are grown by metal–organic vapor-phase epitaxy on sapphire and silicon substrates. The technology of the titanium-nanolayer-induced ultrafast growth of nanowire and microwire crystals is used. As a current is passed through the microcrystals, an electroluminescence signal is observed in the blue–green spectral region.},
doi = {10.1134/S1063782617010122},
journal = {Semiconductors},
number = 1,
volume = 51,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2017},
month = {Sun Jan 15 00:00:00 EST 2017}
}
  • This study focused on the performance of commercial AlGaN/InGaN/GaN blue light emitting diodes (LEDs) under high current pulse conditions. The results of deep level transient spectroscopy (DLTS), thermally stimulated capacitance, and admittance spectroscopy measurements performed on stressed devices, showed no evidence of any deep-level defects that may have developed as a result of high current pulses. Physical analysis of stressed LEDs indicated a strong connection between the high intrinsic defect density in these devices and the resulting mode of degradation. {copyright} {ital 1996 American Institute of Physics.}
  • Vertically aligned InGaN/GaN nanorod light emitting diode (LED) arrays were created from planar LED structures using a new top-down fabrication technique consisting of a plasma etch followed by an anisotropic wet etch. The wet etch results in straight, smooth, well-faceted nanorods with controllable diameters and removes the plasma etch damage. 94% of the nanorod LEDs are dislocation-free and a reduced quantum confined Stark effect is observed due to reduced piezoelectric fields. Despite these advantages, the IQE of the nanorod LEDs measured by photoluminescence is comparable to the planar LED, perhaps due to inefficient thermal transport and enhanced nonradiative surface recombination.
  • Vertically aligned InGaN/GaN nanorod light emitting diode (LED) arrays were created from planar LED structures using a new top-down fabrication technique consisting of a plasma etch followed by an anisotropic wet etch. The wet etch results in straight, smooth, well-faceted nanorods with controllable diameters and removes the plasma etch damage. 94% of the nanorod LEDs are dislocation-free and a reduced quantum confined Stark effect is observed due to reduced piezoelectric fields. Despite these advantages, the IQE of the nanorod LEDs measured by photoluminescence is comparable to the planar LED, perhaps due to inefficient thermal transport and enhanced nonradiative surface recombination.
  • Abstract not provided.