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Title: Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

Abstract

The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A model of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.

Authors:
; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22649622
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 1; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIFFUSION; INTERFACES; LAYERS; MONOCRYSTALS; OXIDATION; OXYGEN; SILICON; SILICON OXIDES; SURFACES; TEMPERATURE DEPENDENCE; TEXTURE; VANADIUM OXIDES

Citation Formats

Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru, Verbitskiy, V. N., Nashchekin, A. V., Trapeznikova, I. N., Bobyl, A. V., and Terukova, E. E. Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer. United States: N. p., 2017. Web. doi:10.1134/S106378261701016X.
Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru, Verbitskiy, V. N., Nashchekin, A. V., Trapeznikova, I. N., Bobyl, A. V., & Terukova, E. E. Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer. United States. doi:10.1134/S106378261701016X.
Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru, Verbitskiy, V. N., Nashchekin, A. V., Trapeznikova, I. N., Bobyl, A. V., and Terukova, E. E. Sun . "Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer". United States. doi:10.1134/S106378261701016X.
@article{osti_22649622,
title = {Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer},
author = {Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru and Verbitskiy, V. N. and Nashchekin, A. V. and Trapeznikova, I. N. and Bobyl, A. V. and Terukova, E. E.},
abstractNote = {The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A model of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.},
doi = {10.1134/S106378261701016X},
journal = {Semiconductors},
number = 1,
volume = 51,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2017},
month = {Sun Jan 15 00:00:00 EST 2017}
}
  • A new layered vanadium bronze designated as {sigma}-phase Zn{sub 0.25}V{sub 2}O{sub 5} {center_dot} H{sub 2}O has been hydrothermally synthesized from ZnCl{sub 2} and VO(OH){sub 2}. A single-crystal study revealed the triclinic system P1: a = 10.614(2){angstrom}, b = 8.031(3) {angstrom}, c = 10.7688(9) {angstrom}, {alpha} = 90.65(1){degrees}, {beta} = 91.14(1){degrees}, {gamma} = 90.09(2){degrees}, and Z = 8. The structure was solved and refined to R/R{sub w} = 0.079/0.048 for 1580 reflections with I > 3{sigma}(I), which consists of V{sub 2}O{sub 5} layers stacking along the c axis and interstitial hydrated Zn{sup 2+} ions. Th eV{sub 2}O{sub 5} layer adopts amore » novel polyhedral framework built up of VO{sub 6} octahedra, VO{sub 5} trigonal bipyramids, and VO{sub 4} tetrahedra. When projected parallel to the ab plane, the V{sub 2}O{sub 5} layer is described by the atomic sheet model in a manner similar to the V{sub 2}O{sub 5} layer of {delta} phase such as {delta}-Ag{sub x}V{sub 2}O{sub 5}, that is, a double-sheet type composed of two V{sub 2}O{sub 5} sheets facing each other. The interstitial Zn atom forms a ZnO{sub 6} octahedron with two apical oxygens of the VO{sub 4} tetrahedra on opposite sides and with four coplanar water molecules. The anhydrous {sigma} phase was obtained by heating the hydrate up to 200{degrees}C accompanied by the contraction in layer spacing from 10.76 to 8.92 {angstrom}.« less
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