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Title: Epitaxial Al{sub x}Ga{sub 1–x}As:Mg alloys with different conductivity types

Abstract

The structural, optical, and energy properties of epitaxial Al{sub x}Ga{sub 1–x}As:Mg/GaAs(100) heterostructures at different levels of doping with Mg are studied by high-resolution X-ray diffraction analysis and Raman and photoluminescence spectroscopies. It is shown that, by choosing the technological conditions of Al{sub x}Ga{sub 1–x}As:Mg alloy production, it is possible to achieve not only different conductivity types, but also substantially different charge-carrier concentrations in an epitaxial film.

Authors:
;  [1]; ; ; ; ;  [2];  [3]; ;  [4]
  1. Voronezh State University (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
  3. Benemérita Universidad Autónoma de Puebla, Instituto de Ciencias (Mexico)
  4. Karlsruhe Nano Micro Facility (Germany)
Publication Date:
OSTI Identifier:
22649619
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 1; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ALUMINIUM ARSENIDES; CHARGE CARRIERS; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; EMISSION SPECTROSCOPY; EPITAXY; GALLIUM ARSENIDES; MAGNESIUM COMPOUNDS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; THIN FILMS; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY

Citation Formats

Seredin, P. V., E-mail: paul@phys.vsu.ru, Lenshin, A. S., Arsentiev, I. N., E-mail: arsentyev@mail.ioffe.ru, Zhabotinskii, A. V., Nikolaev, D. N., Tarasov, I. S., Shamakhov, V. V., Prutskij, Tatiana, E-mail: prutskiy@yahoo.com, Leiste, Harald, and Rinke, Monika. Epitaxial Al{sub x}Ga{sub 1–x}As:Mg alloys with different conductivity types. United States: N. p., 2017. Web. doi:10.1134/S1063782617010213.
Seredin, P. V., E-mail: paul@phys.vsu.ru, Lenshin, A. S., Arsentiev, I. N., E-mail: arsentyev@mail.ioffe.ru, Zhabotinskii, A. V., Nikolaev, D. N., Tarasov, I. S., Shamakhov, V. V., Prutskij, Tatiana, E-mail: prutskiy@yahoo.com, Leiste, Harald, & Rinke, Monika. Epitaxial Al{sub x}Ga{sub 1–x}As:Mg alloys with different conductivity types. United States. doi:10.1134/S1063782617010213.
Seredin, P. V., E-mail: paul@phys.vsu.ru, Lenshin, A. S., Arsentiev, I. N., E-mail: arsentyev@mail.ioffe.ru, Zhabotinskii, A. V., Nikolaev, D. N., Tarasov, I. S., Shamakhov, V. V., Prutskij, Tatiana, E-mail: prutskiy@yahoo.com, Leiste, Harald, and Rinke, Monika. Sun . "Epitaxial Al{sub x}Ga{sub 1–x}As:Mg alloys with different conductivity types". United States. doi:10.1134/S1063782617010213.
@article{osti_22649619,
title = {Epitaxial Al{sub x}Ga{sub 1–x}As:Mg alloys with different conductivity types},
author = {Seredin, P. V., E-mail: paul@phys.vsu.ru and Lenshin, A. S. and Arsentiev, I. N., E-mail: arsentyev@mail.ioffe.ru and Zhabotinskii, A. V. and Nikolaev, D. N. and Tarasov, I. S. and Shamakhov, V. V. and Prutskij, Tatiana, E-mail: prutskiy@yahoo.com and Leiste, Harald and Rinke, Monika},
abstractNote = {The structural, optical, and energy properties of epitaxial Al{sub x}Ga{sub 1–x}As:Mg/GaAs(100) heterostructures at different levels of doping with Mg are studied by high-resolution X-ray diffraction analysis and Raman and photoluminescence spectroscopies. It is shown that, by choosing the technological conditions of Al{sub x}Ga{sub 1–x}As:Mg alloy production, it is possible to achieve not only different conductivity types, but also substantially different charge-carrier concentrations in an epitaxial film.},
doi = {10.1134/S1063782617010213},
journal = {Semiconductors},
number = 1,
volume = 51,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2017},
month = {Sun Jan 15 00:00:00 EST 2017}
}