Epitaxial Al{sub x}Ga{sub 1–x}As:Mg alloys with different conductivity types

Journal Article · Sun Jan 15 00:00:00 EST 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617010213· OSTI ID:22649619

Lenshin, A. S. ^[1]; Zhabotinskii, A. V.; Nikolaev, D. N.; Tarasov, I. S.; Shamakhov, V. V. ^[2]; Prutskij, Tatiana ^[3]; Leiste, Harald; Rinke, Monika ^[4]

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1. Voronezh State University (Russian Federation)
2. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
3. Benemérita Universidad Autónoma de Puebla, Instituto de Ciencias (Mexico)
4. Karlsruhe Nano Micro Facility (Germany)

The structural, optical, and energy properties of epitaxial Al{sub x}Ga{sub 1–x}As:Mg/GaAs(100) heterostructures at different levels of doping with Mg are studied by high-resolution X-ray diffraction analysis and Raman and photoluminescence spectroscopies. It is shown that, by choosing the technological conditions of Al{sub x}Ga{sub 1–x}As:Mg alloy production, it is possible to achieve not only different conductivity types, but also substantially different charge-carrier concentrations in an epitaxial film.

• OSTI ID: 22649619
• Journal Information: Semiconductors, Vol. 51, Issue 1; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
ALUMINIUM ARSENIDES
CHARGE CARRIERS
CONCENTRATION RATIO
ELECTRIC CONDUCTIVITY
EMISSION SPECTROSCOPY
EPITAXY
GALLIUM ARSENIDES
MAGNESIUM COMPOUNDS
PHOTOLUMINESCENCE
RAMAN SPECTROSCOPY
THIN FILMS
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY